Epitaxial growth and band alignment of (Gd(x)La(1-x))(2)O(3) films on n-GaAs (001)

enthalten in: Micron (Oxford, England : 1993) | 2009

von Yang, J. | Choi, S. | Park, H.

Synthesis and characterization of ferroelectric properties of Ce2Ti2O7 thin films with Ce3+ by chemical solution deposition

enthalten in: Thin solid films | 2009

von Kim, W. | Yang, J. | Lee, C. | +2

Epitaxial growth and band alignment of (Gd x La1−x )2O3 films on n-GaAs (001)

enthalten in: Micron | 2009

von Yang, J. | Choi, S. | Park, H.

Epitaxial growth and band alignment of (Gd x La1−x )2O3 films on n-GaAs (001)

enthalten in: Micron | 2009

von Yang, J. | Choi, S. | Park, H.

Effect of surface capping molecules on the electronic structure of CdSe nanocrystal film

enthalten in: Thin solid films | 2006

von Choi, H. | Yang, J. | Park, H.

Chemical bonding states and energy band gap of SiO2-incorporated La2O3 films on n-GaAs (001)

enthalten in: Thin solid films | 2006

von Yang, J. | Kim, W. | Park, H.

Rare-earth gate oxides for GaAs MOSFET application

enthalten in: Applied surface science | 2006

von Kwon, K. | Yang, J. | Park, H. | +2

Changes in the electronic energy structure of CdSe nanocrystals of close-packed array by in situ anneal

enthalten in: Applied surface science | 2005

von Choi, H. | Yang, J. | Yoon, S. | +1

1) structure

enthalten in: Applied surface science | 2005

von Yang, J. | Park, H.

Band offset control of Gd2O3-n-GaAs (001) structure by incorporation of SiO2

enthalten in: Thin solid films | 2005

von Yang, J. | Park, H. | Kwon, K.