Epitaxial growth and band alignment of (Gd(x)La(1-x))(2)O(3) films on n-GaAs (001)
Herein we demonstrate the epitaxial stabilization of single-crystalline (Gd(x)La(1-x))(2)O(3) films on n-GaAs (001) with a controlled lattice match. (Gd(x)La(1-x))(2)O(3) films have an in-plane epitaxial relationship with a twofold rotation on GaAs (001). Spectroscopic characterization by photoemission and absorption confirms that the band gap of (Gd(x)La(1-x))(2)O(3) film is approximately approximately 5.8eV. However, the conduction band offset is increased by the unpinned Fermi level of the n-GaAs in the (Gd(x)La(1-x))(2)O(3) film (x=0.97). The correlation of the crystalline property and the interfacial band offset by the electrical properties, as probed by capacitance and leakage current measurements, is also discussed.
| Medienart: |
E-Artikel |
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| Erscheinungsjahr: |
2009 |
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| Erschienen: |
2009 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:40 |
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| Enthalten in: |
Micron (Oxford, England : 1993) - 40(2009), 1 vom: 01. Jan., Seite 114-7 |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Yang, Jun-Kyu [VerfasserIn] |
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| Anmerkungen: |
Date Completed 12.03.2009 Date Revised 01.01.2009 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
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| doi: |
10.1016/j.micron.2008.03.002 |
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| funding: |
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| Förderinstitution / Projekttitel: |
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| PPN (Katalog-ID): |
NLM179218409 |
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| LEADER | 01000naa a22002652 4500 | ||
|---|---|---|---|
| 001 | NLM179218409 | ||
| 003 | DE-627 | ||
| 005 | 20231223153417.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 231223s2009 xx |||||o 00| ||eng c | ||
| 024 | 7 | |a 10.1016/j.micron.2008.03.002 |2 doi | |
| 028 | 5 | 2 | |a pubmed24n0597.xml |
| 035 | |a (DE-627)NLM179218409 | ||
| 035 | |a (NLM)18442915 | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 100 | 1 | |a Yang, Jun-Kyu |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Epitaxial growth and band alignment of (Gd(x)La(1-x))(2)O(3) films on n-GaAs (001) |
| 264 | 1 | |c 2009 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a ƒaComputermedien |b c |2 rdamedia | ||
| 338 | |a ƒa Online-Ressource |b cr |2 rdacarrier | ||
| 500 | |a Date Completed 12.03.2009 | ||
| 500 | |a Date Revised 01.01.2009 | ||
| 500 | |a published: Print-Electronic | ||
| 500 | |a Citation Status PubMed-not-MEDLINE | ||
| 520 | |a Herein we demonstrate the epitaxial stabilization of single-crystalline (Gd(x)La(1-x))(2)O(3) films on n-GaAs (001) with a controlled lattice match. (Gd(x)La(1-x))(2)O(3) films have an in-plane epitaxial relationship with a twofold rotation on GaAs (001). Spectroscopic characterization by photoemission and absorption confirms that the band gap of (Gd(x)La(1-x))(2)O(3) film is approximately approximately 5.8eV. However, the conduction band offset is increased by the unpinned Fermi level of the n-GaAs in the (Gd(x)La(1-x))(2)O(3) film (x=0.97). The correlation of the crystalline property and the interfacial band offset by the electrical properties, as probed by capacitance and leakage current measurements, is also discussed | ||
| 650 | 4 | |a Journal Article | |
| 650 | 4 | |a Research Support, Non-U.S. Gov't | |
| 700 | 1 | |a Choi, Sun Gyu |e verfasserin |4 aut | |
| 700 | 1 | |a Park, Hyung-Ho |e verfasserin |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Micron (Oxford, England : 1993) |d 1997 |g 40(2009), 1 vom: 01. Jan., Seite 114-7 |w (DE-627)NLM074969145 |x 1878-4291 |7 nnns |
| 773 | 1 | 8 | |g volume:40 |g year:2009 |g number:1 |g day:01 |g month:01 |g pages:114-7 |
| 856 | 4 | 0 | |u http://dx.doi.org/10.1016/j.micron.2008.03.002 |3 Volltext |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a GBV_NLM | ||
| 951 | |a AR | ||
| 952 | |d 40 |j 2009 |e 1 |b 01 |c 01 |h 114-7 | ||