Optical properties of thickness-controlled MoS2 thin films studied by spectroscopic ellipsometry

enthalten in: Applied surface science | 2017

von Li, D. | Song, X. | Xu, J. | +9

Optical properties of thickness-controlled MoS2 thin films studied by spectroscopic ellipsometry

enthalten in: Applied surface science | 2016

von Li, D. | Song, X. | Xu, J. | +9

Atomic layer deposition of ZnO on thermal SiO2 and Si surfaces using N2-diluted diethylzinc and H2O2 precursors

enthalten in: Applied surface science | 2012

von Qian, K. | Chen, S. | Zhu, B. | +6

Study of nickel silicide formation on Si(110) substrate

enthalten in: Applied surface science | 2011

von Guo, X. | Yu, H. | Jiang, Y. | +3

Thermal stability of atomic-layer-deposited ultra-thin niobium oxide film on Si (100)

enthalten in: Applied surface science | 2011

von Huang, Y. | Xu, Y. | Ding, S. | +4

Surface reaction mechanism of Y2O3 atomic layer deposition on the hydroxylated Si(100)-2×1: A density functional theory study

enthalten in: Applied surface science | 2009

von Ren, J. | Zhou, G. | Hu, Y. | +1

Surface reactions in atomic layer deposition of HfO2, ZrO2 and Al2O3 on hydroxylated and sulfur-passivated GaAs(100) surfaces: A comparative study by density functional theory

enthalten in: Applied surface science | 2008

von Ren, J. | Zhou, G. | Hu, Y. | +2

A study of interface characteristics in HfAlO-p-Si by deep level transient spectroscopy

enthalten in: Applied surface science | 2008

von Zhan, N. | Xu, M. | Zhang, D. | +1

Density functional study of initial HfCl4 adsorption and decomposition reactions on silicon surfaces with SiON interfacial layer

enthalten in: Applied surface science | 2007

von Ren, J. | Sun, B. | Zhang, D.

Surface reaction mechanism of atomic layer deposition of HfO2 on Ge(100)-2×1: A density functional theory study

enthalten in: Applied surface science | 2006

von Ren, J. | Lu, H. | Chen, W. | +2