Solid-state tellurium doping of AlInP and its application to photovoltaic devices grown by molecular beam epitaxy

enthalten in: Journal of crystal growth | 2015

von Dai, P. | Tan, M. | Wu, Y. | +4

Direct transfer-adsorption: The new molecular Dynamics transition mechanism of nano-diamond preparation by laser shock processing

enthalten in: Journal of crystal growth | 2015

von Ren, X. | Tang, S. | Zheng, L. | +6

Effects of temperature and substrate miscut on the crystalline quality of metamorphic AlInAs layers grown on GaAs substrate

enthalten in: Journal of crystal growth | 2013

von Sun, Y. | Li, K. | Dong, J. | +5

Effects of substrate miscut on dislocation glide in metamorphic (Al)GaInP buffers

enthalten in: Journal of crystal growth | 2013

von Li, K. | Sun, Y. | Dong, J. | +5

The investigation of GaInP solar cell grown by all-solid MBE

enthalten in: Journal of crystal growth | 2013

von Dai, P. | Lu, S. | Zhu, Y. | +8

Electrical and optical inhomogeneity in N-face GaN grown by hydride vapor phase epitaxy

enthalten in: Journal of crystal growth | 2013

von Su, X. | Xu, K. | Ren, G. | +8

Tilt generation and phase separation in metamorphic GaInP buffers grown on GaAs substrates by metal-organic chemical vapor deposition

enthalten in: Journal of crystal growth | 2013

von Li, K. | Sun, Y. | Dong, J. | +4

Compositionally undulating step-graded InAs y P1−y buffer layer growth by metal-organic chemical vapor deposition

enthalten in: Journal of crystal growth | 2013

von Ji, L. | Lu, S. | Zhao, Y. | +3

Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD)

enthalten in: Journal of crystal growth | 2012

von Zhu, J. | Fan, Y. | Zhang, H. | +9

InAs/GaAs quantum dot lasers grown by gas-source molecular-beam epitaxy

enthalten in: Journal of crystal growth | 2010

von Yang, H. | Gong, Q. | Li, S. | +4