C and Si delta doping in Ge by CH

enthalten in: Thin solid films | 2016

von Yamamoto, Y. | Ueno, N. | Sakuraba, M. | +3

Lateral solid phase epitaxy of amorphously grown Si1−xGex layers on SiO2/Si(100) substrates using in-situ RPCVD postannealing

enthalten in: Thin solid films | 2015

von Skibitzki, O. | Yamamoto, Y. | Schubert, M. | +1

Phosphorus atomic layer doping in SiGe using reduced pressure chemical vapor deposition

enthalten in: Thin solid films | 2014

von Yamamoto, Y. | Heinemann, B. | Murota, J. | +1

Heteroepitaxial growth of Ge on compliant strained nano-structured Si lines and dots on (001) silicon on insulator substrate

enthalten in: Thin solid films | 2014

von Zaumseil, P. | Yamamoto, Y. | Schubert, M. | +2

Low threading dislocation Ge on Si by combining deposition and etching

enthalten in: Thin solid films | 2012

von Yamamoto, Y. | Kozlowski, G. | Zaumseil, P. | +1

Preparation and characterization of Ge epitaxially grown on nano-structured periodic Si pillars and bars on Si(001) substrate

enthalten in: Thin solid films | 2012

von Zaumseil, P. | Yamamoto, Y. | Bauer, J. | +5

Solid-phase epitaxy of undoped amorphous silicon by in-situ postannealing

enthalten in: Thin solid films | 2012

von Skibitzki, O. | Yamamoto, Y. | Schubert, M. | +1

Selective vapor phase etching of SiGe versus Si by HCl

enthalten in: Thin solid films | 2009

von Yamamoto, Y. | Köpke, K. | Tillack, B.

Atomic layer processing for doping of SiGe

enthalten in: Thin solid films | 2006

von Tillack, B. | Yamamoto, Y. | Bolze, D. | +5

P doping control during SiGe:C epitaxy

enthalten in: Thin solid films | 2006

von Yamamoto, Y. | Tillack, B. | Köpke, K. | +1