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/vufind/Search/Results?lookfor=%22Mahata%2C+Chandreswar%22&type=Person&sort=year
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PubPharm (25)
1
Analog Memory and Synaptic Plasticity in an InGaZnO-Based Memristor by Modifying Intrinsic Oxygen Vacancies
enthalten in:
Materials (Basel, Switzerland)
| 2023
von
Mahata, C.
|
So, H.
|
Kim, S.
| +2
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2
Uniform multilevel switching and synaptic properties in RF-sputtered InGaZnO-based memristor treated with oxygen plasma
enthalten in:
The Journal of chemical physics
| 2023
von
Mahata, C.
|
So, H.
|
Yang, S.
| +3
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3
SnO2-Based Memory Device with Filamentary Switching Mechanism for Advanced Data Storage and Computing
enthalten in:
Nanomaterials (Basel, Switzerland)
| 2023
von
Ismail, M.
|
Mahata, C.
|
Kang, M.
| +1
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4
Correction : Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems
enthalten in:
Nanoscale
| 2023
von
Yang, S.
|
Kim, T.
|
Kim, S.
| +8
ErratumFor: Nanoscale. 2023 Aug 17;15(32):13239-13251. - PMID 37525621
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5
Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems
enthalten in:
Nanoscale
| 2023
von
Yang, S.
|
Kim, T.
|
Kim, S.
| +8
ErratumIn: Nanoscale. 2023 Sep 1;15(34):14267. - PMID 37609880
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6
Mimicking biological synapses with a-HfSiOx-based memristor : implications for artificial intelligence and memory applications
enthalten in:
Nano convergence
| 2023
von
Ismail, M.
|
Rasheed, M.
|
Mahata, C.
| +2
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7
Forming-Free Tunable Analog Switching in WOx/TaOx Heterojunction for Emulating Electronic Synapses
enthalten in:
Materials (Basel, Switzerland)
| 2022
von
Mahata, C.
|
Pyo, J.
|
Jeon, B.
| +3
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8
Improved Resistive Switching with Low-Power Synaptic Behaviors of ZnO/Al2O3 Bilayer Structure
enthalten in:
Materials (Basel, Switzerland)
| 2022
von
Mahata, C.
|
Park, J.
|
Ismail, M.
| +2
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9
Memristive Switching and Density-Functional Theory Calculations in Double Nitride Insulating Layers
enthalten in:
Micromachines
| 2022
von
Khan, S.
|
Hussain, F.
|
Chung, D.
| +10
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10
Robust Resistive Switching Constancy and Quantum Conductance in High-k Dielectric-Based Memristor for Neuromorphic Engineering
enthalten in:
Nanoscale research letters
| 2022
von
Ismail, M.
|
Mahata, C.
|
Kang, M.
| +1
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25
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Zeitschriftentitel
5
Nanomaterials (Basel, Switzerland)
4
ACS applied materials & interfaces
4
Nanoscale research letters
3
Materials (Basel, Switzerland)
3
Nanoscale
1
Advanced materials (Deerfield Beach, Fla.)
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1
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1
The Journal of chemical physics
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Thema
24
Journal Article
7
resistive switching
3
Research Support, Non-U.S. Gov't
3
boron nitride
3
long-term potentiation
3
short-term plasticity
3
synaptic device
2
Quantum conductance
2
Schottky emission
2
memristor
2
neuromorphic computing
2
neuromorphic system
2
silicon nitride
2
spike-rate-dependent plasticity
2
synaptic plasticity
1
037VRW83CF
1
059QF0KO0R
1
3M4G523W1G
1
5TWQ1V240M
1
ALD TiN-nanoparticles
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Erscheinungszeitraum
18
2020-
7
2010-2019
Erscheinungsjahr(e)
Von:
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Sprache
25
Englisch
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