Synaptic Properties of a PbHfO3 Ferroelectric Memristor for Neuromorphic Computing

enthalten in: ACS applied materials & interfaces | 2024

von Huang, W. | Nie, L. | Lai, X. | +5

An adjustable multistage resistance switching behavior of a photoelectric artificial synaptic device with a ferroelectric diode effect for neuromorphic computing

enthalten in: Materials horizons | 2024

von Lai, X. | Tang, Z. | Fang, J. | +10