InSb/InAs/InGa(Al)As/GaAs(001) metamorphic nanoheterostructures grown by MBE and emitting beyond 3μm

enthalten in: Journal of crystal growth | 2017

von Chernov, M. | Komkov, O. | Firsov, D. | +8

Peculiarities of strain relaxation in linearly graded InxGa1−xAs/GaAs(001) metamorphic buffer layers grown by molecular beam epitaxy

enthalten in: Journal of crystal growth | 2016

von Sorokin, S. | Klimko, G. | Sedova, I. | +7

CdTe/Zn(Mg)(Se)Te quantum dots for single photon emitters grown by MBE

enthalten in: Journal of crystal growth | 2016

von Sorokin, S. | Sedova, I. | Gronin, S. | +6

Metastable nature of InN and In-rich InGaN alloys

enthalten in: Journal of crystal growth | 2014

von Ivanov, S. | Shubina, T. | Komissarova, T. | +1

Control of threading dislocation density at the initial growth stage of AlN on c-sapphire in plasma-assisted MBE

enthalten in: Journal of crystal growth | 2013

von Nechaev, D. | Aseev, P. | Jmerik, V. | +5

Dynamics of electron-spin injection in a heterovalent GaAs/AlGaAs/ZnMnSe structure with a coupled double quantum well of GaAs/AlGaAs

enthalten in: Journal of crystal growth | 2013

von Kuno, Y. | Sasaki, T. | Kiba, T. | +5

Growth of thick AlN epilayers with droplet-free and atomically smooth surface by plasma-assisted molecular beam epitaxy using laser reflectometry monitoring

enthalten in: Journal of crystal growth | 2012

von Jmerik, V. | Mizerov, A. | Nechaev, D. | +5

Role of strain in growth kinetics of AlGaN layers during plasma-assisted molecular beam epitaxy

enthalten in: Journal of crystal growth | 2011

von Mizerov, A. | Jmerik, V. | Yagovkina, M. | +3

AlGaN quantum well structures for deep-UV LEDs grown by plasma-assisted MBE using sub-monolayer digital-alloying technique

enthalten in: Journal of crystal growth | 2009

von Jmerik, V. | Shubina, T. | Mizerov, A. | +11

Compact green laser converter with injection pumping, based on MBE grown II–VI nanostructures

enthalten in: Journal of crystal growth | 2009

von Ivanov, S. | Lutsenko, E. | Sorokin, S. | +6