Broadband and perfect absorption in monolayer MoS2 based multilayered structure arranged in Kolakoski sequence
Abstract Monolayer MoS2 has excellent optical properties, but its low light absorption rate affects its application in optical absorbers. To improve its absorption performance, we design a perfect MoS2 absorption structure in the visible band based on the omnidirectional reflectivity of the Kolakoski sequence aperiodic multilayer structure with SiO2 and Si as dielectric materials. By optimizing the thickness of SiO2 (db) and Si (dc) and adjusting the number of periods (N) of the basic absorption unit (S), we obtain the best absorption spectra of the structure in the case of vertical incidence of transverse electric and transverse magnetic waves, respectively. When N is set to 3, the structure achieves complete absorption in the 350 nm-450 nm band; when N is increased to 5 and 7, the average absorption of the structure in the 350 nm-600 nm band is over 90%. After that, we use the critical coupling theory to explain this result. In addition, the stability and practicality of this structure are verified by analyzing the full-angle absorption spectra of the absorption structure under different polarization conditions at different period numbers..
Medienart: |
Preprint |
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Erscheinungsjahr: |
2022 |
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Erschienen: |
2022 |
Enthalten in: |
ResearchSquare.com - (2022) vom: 06. Apr. Zur Gesamtaufnahme - year:2022 |
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Sprache: |
Englisch |
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Beteiligte Personen: |
Zhao, Yining [VerfasserIn] |
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Links: |
Volltext [kostenfrei] |
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doi: |
10.21203/rs.3.rs-1492179/v1 |
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funding: |
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Förderinstitution / Projekttitel: |
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PPN (Katalog-ID): |
XRA035694769 |
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520 | |a Abstract Monolayer MoS2 has excellent optical properties, but its low light absorption rate affects its application in optical absorbers. To improve its absorption performance, we design a perfect MoS2 absorption structure in the visible band based on the omnidirectional reflectivity of the Kolakoski sequence aperiodic multilayer structure with SiO2 and Si as dielectric materials. By optimizing the thickness of SiO2 (db) and Si (dc) and adjusting the number of periods (N) of the basic absorption unit (S), we obtain the best absorption spectra of the structure in the case of vertical incidence of transverse electric and transverse magnetic waves, respectively. When N is set to 3, the structure achieves complete absorption in the 350 nm-450 nm band; when N is increased to 5 and 7, the average absorption of the structure in the 350 nm-600 nm band is over 90%. After that, we use the critical coupling theory to explain this result. In addition, the stability and practicality of this structure are verified by analyzing the full-angle absorption spectra of the absorption structure under different polarization conditions at different period numbers. | ||
700 | 1 | |a Zhou, Kai |e verfasserin |4 aut | |
700 | 1 | |a Chen, Bojun |e verfasserin |4 aut | |
700 | 1 | |a Da, Haixia |e verfasserin |4 aut | |
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