Layer-dependent Raman spectroscopy of ultrathin Ta$_2$Pd$_3$Te$_5$
Two-dimensional topological insulators (2DTIs) or quantum spin Hall insulators are attracting increasing attention due to their potential applications in next-generation spintronic devices. Despite their promising prospects, realizable 2DTIs are still limited. Recently, Ta2Pd3Te5, a semiconducting van der Waals material, has shown spectroscopic evidence of quantum spin Hall states. However, achieving controlled preparation of few- to monolayer samples, a crucial step in realizing quantum spin Hall devices, has not yet been achieved. In this work, we fabricated few- to monolayer Ta$_2$Pd$_3$Te$_5$ and performed systematic thickness- and temperature-dependent Raman spectroscopy measurements. Our results demonstrate that Raman spectra can provide valuable information to determine the thickness of Ta2Pd3Te5 thin flakes. Moreover, our angle-resolved polarized Raman (ARPR) spectroscopy measurements show that the intensities of the Raman peaks are strongly anisotropic due to the quasi-one-dimensional atomic structure, providing a straightforward method to determine its crystalline orientation. Our findings may stimulate further efforts to realize quantum devices based on few or monolayer Ta$_2$Pd$_3$Te$_5$..
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Preprint| Erscheinungsjahr: |
2024 |
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| Erschienen: |
2024 |
| Enthalten in: |
arXiv.org - (2024) vom: 28. Feb. Zur Gesamtaufnahme - year:2024 |
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| Sprache: |
Englisch |
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| Beteiligte Personen: |
Sun, Zhenyu [VerfasserIn] |
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| doi: |
http://dx.doi.org/10.1103/PhysRevMaterials.7.094004 |
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| PPN (Katalog-ID): |
XCH042756111 |
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| 100 | 1 | |a Sun, Zhenyu |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Layer-dependent Raman spectroscopy of ultrathin Ta$_2$Pd$_3$Te$_5$ |
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| 520 | |a Two-dimensional topological insulators (2DTIs) or quantum spin Hall insulators are attracting increasing attention due to their potential applications in next-generation spintronic devices. Despite their promising prospects, realizable 2DTIs are still limited. Recently, Ta2Pd3Te5, a semiconducting van der Waals material, has shown spectroscopic evidence of quantum spin Hall states. However, achieving controlled preparation of few- to monolayer samples, a crucial step in realizing quantum spin Hall devices, has not yet been achieved. In this work, we fabricated few- to monolayer Ta$_2$Pd$_3$Te$_5$ and performed systematic thickness- and temperature-dependent Raman spectroscopy measurements. Our results demonstrate that Raman spectra can provide valuable information to determine the thickness of Ta2Pd3Te5 thin flakes. Moreover, our angle-resolved polarized Raman (ARPR) spectroscopy measurements show that the intensities of the Raman peaks are strongly anisotropic due to the quasi-one-dimensional atomic structure, providing a straightforward method to determine its crystalline orientation. Our findings may stimulate further efforts to realize quantum devices based on few or monolayer Ta$_2$Pd$_3$Te$_5$. | ||
| 650 | 4 | |a Physics - Materials Science |7 (dpeaa)DE-84 | |
| 650 | 4 | |a 530 |7 (dpeaa)DE-84 | |
| 700 | 1 | |a Guo, Zhaopeng |4 aut | |
| 700 | 1 | |a Yan, Dayu |4 aut | |
| 700 | 1 | |a Cheng, Peng |4 aut | |
| 700 | 1 | |a Chen, Lan |4 aut | |
| 700 | 1 | |a Shi, Youguo |4 aut | |
| 700 | 1 | |a Huang, Yuan |4 aut | |
| 700 | 1 | |a Wang, Zhijun |4 aut | |
| 700 | 1 | |a Wu, Kehui |4 aut | |
| 700 | 1 | |a Feng, Baojie |4 aut | |
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