Crypto primitive of MOCVD $ MoS^{2} $ transistors for highly secured physical unclonable functions
Abstract Physically unclonable crypto primitives have potential applications for anti-counterfeiting, identification, and authentication, which are clone proof and resistant to variously physical attack. Conventional physical unclonable function (PUF) based on Si complementary metal-oxide-semiconductor (CMOS) technologies greatly suffers from entropy loss and bit instability due to noise sensitivity. Here we grow atomically thick $ MoS_{2} $ thin film and fabricate field-effect transistors (FETs). The inherently physical randomness of $ MoS_{2} $ transistors from materials growth and device fabrication process makes it appropriate for the application of PUF device. We perform electrical characterizations of $ MoS_{2} $ FETs, collect the data from 448 devices, and generate PUF keys by splitting drain current at specific levels to evaluate the response performance. Proper selection of splitting threshold enables to generate binary, ternary, and double binary keys. The generated PUF keys exhibit good randomness and uniqueness, providing a possibility for harvesting highly secured PUF devices with two-dimensional materials..
| Medienart: |
Artikel |
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| Erscheinungsjahr: |
2020 |
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| Erschienen: |
2020 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:14 |
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| Enthalten in: |
Nano research - 14(2020), 6 vom: 02. Sept., Seite 1784-1788 |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Shao, Bangjie [VerfasserIn] |
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| Links: |
Volltext [lizenzpflichtig] |
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| Anmerkungen: |
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2020 |
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| doi: |
10.1007/s12274-020-3033-0 |
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| funding: |
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| Förderinstitution / Projekttitel: |
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OLC2124698893 |
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| 520 | |a Abstract Physically unclonable crypto primitives have potential applications for anti-counterfeiting, identification, and authentication, which are clone proof and resistant to variously physical attack. Conventional physical unclonable function (PUF) based on Si complementary metal-oxide-semiconductor (CMOS) technologies greatly suffers from entropy loss and bit instability due to noise sensitivity. Here we grow atomically thick $ MoS_{2} $ thin film and fabricate field-effect transistors (FETs). The inherently physical randomness of $ MoS_{2} $ transistors from materials growth and device fabrication process makes it appropriate for the application of PUF device. We perform electrical characterizations of $ MoS_{2} $ FETs, collect the data from 448 devices, and generate PUF keys by splitting drain current at specific levels to evaluate the response performance. Proper selection of splitting threshold enables to generate binary, ternary, and double binary keys. The generated PUF keys exhibit good randomness and uniqueness, providing a possibility for harvesting highly secured PUF devices with two-dimensional materials. | ||
| 650 | 4 | |a transition metal dichalcogenides | |
| 650 | 4 | |a two-dimensional materials | |
| 650 | 4 | |a physical unclonable function | |
| 650 | 4 | |a metal-organic chemical vapor deposition | |
| 650 | 4 | |a field-effect transistor | |
| 700 | 1 | |a Choy, Tsz Hin |4 aut | |
| 700 | 1 | |a Zhou, Feichi |4 aut | |
| 700 | 1 | |a Chen, Jiewei |4 aut | |
| 700 | 1 | |a Wang, Cong |4 aut | |
| 700 | 1 | |a Park, Yong Ju |4 aut | |
| 700 | 1 | |a Ahn, Jong-Hyun |4 aut | |
| 700 | 1 | |a Chai, Yang |4 aut | |
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