Preparation and formation mechanism of CdS nano-films via chemical bath deposition
Abstract CdS semiconductor nano-films were grown on ITO glass substrates by means of chemical bath deposition (CBD), with Cd($ NO_{3} $)2 as Cd ion and ($ NH_{2} $)2CS as S ion sources. The concentration of Cd ions, deposition temperature, deposition time and post-treatment temperature have an impact on the formation of CdS nano-films. UV-vis absorption spectrum and atomic force microscope (AFM) images indicated that the change of concentration and post-treatment temperature may adjust the band-gap of CdS to obtain stable, homogeneous and compact films. Formation mechanism of the crystal nucleus and CdS film was also discussed. Active sites on the surface of ITO are critical to the formation of the crystal nucleus and a uniform and compact CdS nano-film. The active site and crystal nucleus are formed due to the comprehensive effect of electricity, thermodynamics and chemistry..
Medienart: |
Artikel |
---|
Erscheinungsjahr: |
2008 |
---|---|
Erschienen: |
2008 |
Enthalten in: |
Zur Gesamtaufnahme - volume:3 |
---|---|
Enthalten in: |
Frontiers of chemistry in China - 3(2008), 1 vom: Jan., Seite 18-22 |
Sprache: |
Englisch |
---|
Beteiligte Personen: |
Zhou, Xiangdong [VerfasserIn] |
---|
Links: |
Volltext [lizenzpflichtig] |
---|
BKL: | |
---|---|
Themen: |
Active site |
Anmerkungen: |
© Higher Education Press and Springer-Verlag 2008 |
---|
doi: |
10.1007/s11458-008-0009-0 |
---|
funding: |
|
---|---|
Förderinstitution / Projekttitel: |
|
PPN (Katalog-ID): |
OLC2075753873 |
---|
LEADER | 01000caa a22002652 4500 | ||
---|---|---|---|
001 | OLC2075753873 | ||
003 | DE-627 | ||
005 | 20230513035246.0 | ||
007 | tu | ||
008 | 200820s2008 xx ||||| 00| ||eng c | ||
024 | 7 | |a 10.1007/s11458-008-0009-0 |2 doi | |
035 | |a (DE-627)OLC2075753873 | ||
035 | |a (DE-He213)s11458-008-0009-0-p | ||
040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
041 | |a eng | ||
082 | 0 | 4 | |a 540 |q VZ |
082 | 0 | 4 | |a 540 |q VZ |
084 | |a 35.00$jChemie: Allgemeines |2 bkl | ||
084 | |a 35.04$jAusbildung$jBeruf$jOrganisationen$XChemie |2 bkl | ||
100 | 1 | |a Zhou, Xiangdong |e verfasserin |4 aut | |
245 | 1 | 0 | |a Preparation and formation mechanism of CdS nano-films via chemical bath deposition |
264 | 1 | |c 2008 | |
336 | |a Text |b txt |2 rdacontent | ||
337 | |a ohne Hilfsmittel zu benutzen |b n |2 rdamedia | ||
338 | |a Band |b nc |2 rdacarrier | ||
500 | |a © Higher Education Press and Springer-Verlag 2008 | ||
520 | |a Abstract CdS semiconductor nano-films were grown on ITO glass substrates by means of chemical bath deposition (CBD), with Cd($ NO_{3} $)2 as Cd ion and ($ NH_{2} $)2CS as S ion sources. The concentration of Cd ions, deposition temperature, deposition time and post-treatment temperature have an impact on the formation of CdS nano-films. UV-vis absorption spectrum and atomic force microscope (AFM) images indicated that the change of concentration and post-treatment temperature may adjust the band-gap of CdS to obtain stable, homogeneous and compact films. Formation mechanism of the crystal nucleus and CdS film was also discussed. Active sites on the surface of ITO are critical to the formation of the crystal nucleus and a uniform and compact CdS nano-film. The active site and crystal nucleus are formed due to the comprehensive effect of electricity, thermodynamics and chemistry. | ||
650 | 4 | |a CdS nano-film | |
650 | 4 | |a chemical bath deposition (CBD) | |
650 | 4 | |a uniform and compact film | |
650 | 4 | |a active site | |
650 | 4 | |a crystal nucleus | |
700 | 1 | |a Li, Ziheng |4 aut | |
700 | 1 | |a Li, Zhiyou |4 aut | |
700 | 1 | |a Xu, Shuang |4 aut | |
773 | 0 | 8 | |i Enthalten in |t Frontiers of chemistry in China |d Higher Education Press, 2006 |g 3(2008), 1 vom: Jan., Seite 18-22 |w (DE-627)527642207 |w (DE-600)2278517-6 |w (DE-576)272963577 |x 1673-3495 |7 nnns |
773 | 1 | 8 | |g volume:3 |g year:2008 |g number:1 |g month:01 |g pages:18-22 |
856 | 4 | 1 | |u https://doi.org/10.1007/s11458-008-0009-0 |z lizenzpflichtig |3 Volltext |
912 | |a GBV_USEFLAG_A | ||
912 | |a SYSFLAG_A | ||
912 | |a GBV_OLC | ||
912 | |a SSG-OLC-PHA | ||
912 | |a SSG-OLC-DE-84 | ||
912 | |a GBV_ILN_70 | ||
912 | |a GBV_ILN_2018 | ||
936 | b | k | |a 35.00$jChemie: Allgemeines |q VZ |0 106422014 |0 (DE-625)106422014 |
936 | b | k | |a 35.04$jAusbildung$jBeruf$jOrganisationen$XChemie |q VZ |0 106407821 |0 (DE-625)106407821 |
951 | |a AR | ||
952 | |d 3 |j 2008 |e 1 |c 01 |h 18-22 |