Synthesis of vertically aligned carbon nanotube arrays on silicon substrates
Abstract The growth of well-aligned carbon nanotube (CNT) arrays using a heat chemical vapor deposition system on silicon substrates is reported. The growth properties of CNT arrays are studied as a function of synthesis conditions. It is found that 750°C and 10 nm Fe film are suitable conditions for the growth of well-aligned CNT arrays. CNT arrays with a uniform diameter, thick tube wall and firm cohesion to the Si substrate can be grown for $ C_{2} $$ H_{2} $ concentration of 27%. Based on the experiment, the processes of improving the alignment of CNT arrays and cohesion between CNT arrays and Si substrates are discussed..
| Medienart: |
Artikel |
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| Erscheinungsjahr: |
2004 |
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| Erschienen: |
2004 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:47 |
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| Enthalten in: |
Science in China / E - 47(2004), 5 vom: Sept., Seite 616-624 |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Zheng, Ruiting [VerfasserIn] |
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| Links: |
Volltext [lizenzpflichtig] |
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| Themen: |
Carbon nanotubes |
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| Anmerkungen: |
© Science in China Press 2004 |
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| doi: |
10.1360/03ye0403 |
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| funding: |
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| Förderinstitution / Projekttitel: |
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| 520 | |a Abstract The growth of well-aligned carbon nanotube (CNT) arrays using a heat chemical vapor deposition system on silicon substrates is reported. The growth properties of CNT arrays are studied as a function of synthesis conditions. It is found that 750°C and 10 nm Fe film are suitable conditions for the growth of well-aligned CNT arrays. CNT arrays with a uniform diameter, thick tube wall and firm cohesion to the Si substrate can be grown for $ C_{2} $$ H_{2} $ concentration of 27%. Based on the experiment, the processes of improving the alignment of CNT arrays and cohesion between CNT arrays and Si substrates are discussed. | ||
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| 700 | 1 | |a Zhao, Yong |4 aut | |
| 700 | 1 | |a Liu, Huaping |4 aut | |
| 700 | 1 | |a Liang, Changlin |4 aut | |
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