Argon Cluster Sputtering Source for ToF-SIMS Depth Profiling of Insulating Materials: High Sputter Rate and Accurate Interfacial Information
The use of an argon cluster ion sputtering source has been demonstrated to perform superiorly relative to traditional oxygen and cesium ion sputtering sources for ToF-SIMS depth profiling of insulating materials. The superior performance has been attributed to effective alleviation of surface charging. A simulated nuclear waste glass (SON68) and layered hole-perovskite oxide thin films were selected as model systems because of their fundamental and practical significance. Our results show that high sputter rates and accurate interfacial information can be achieved simultaneously for argon cluster sputtering, whereas this is not the case for cesium and oxygen sputtering. Therefore, the implementation of an argon cluster sputtering source can significantly improve the analysis efficiency of insulating materials and, thus, can expand its applications to the study of glass corrosion, perovskite oxide thin film characterization, and many other systems of interest. Graphical Abstract ᅟ.
| Medienart: |
Artikel |
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| Erscheinungsjahr: |
2015 |
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| Erschienen: |
2015 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:26 |
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| Enthalten in: |
Journal of the American Society for Mass Spectrometry - 26(2015), 8, Seite 1283-1290 |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Wang, Zhaoying [VerfasserIn] |
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| Links: |
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| Themen: |
Analytical Chemistry |
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| doi: |
10.1007/s13361-015-1159-1 |
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| funding: |
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| Förderinstitution / Projekttitel: |
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OLC1958448354 |
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| 520 | |a The use of an argon cluster ion sputtering source has been demonstrated to perform superiorly relative to traditional oxygen and cesium ion sputtering sources for ToF-SIMS depth profiling of insulating materials. The superior performance has been attributed to effective alleviation of surface charging. A simulated nuclear waste glass (SON68) and layered hole-perovskite oxide thin films were selected as model systems because of their fundamental and practical significance. Our results show that high sputter rates and accurate interfacial information can be achieved simultaneously for argon cluster sputtering, whereas this is not the case for cesium and oxygen sputtering. Therefore, the implementation of an argon cluster sputtering source can significantly improve the analysis efficiency of insulating materials and, thus, can expand its applications to the study of glass corrosion, perovskite oxide thin film characterization, and many other systems of interest. Graphical Abstract ᅟ | ||
| 540 | |a Nutzungsrecht: © American Society for Mass Spectrometry 2015 | ||
| 650 | 4 | |a SON68 glass | |
| 650 | 4 | |a Sputtering rate | |
| 650 | 4 | |a Charging alleviation | |
| 650 | 4 | |a Organic Chemistry | |
| 650 | 4 | |a Chemistry | |
| 650 | 4 | |a Analytical Chemistry | |
| 650 | 4 | |a Argon cluster | |
| 650 | 4 | |a Proteomics | |
| 650 | 4 | |a Bioinformatics | |
| 650 | 4 | |a ToF-SIMS | |
| 650 | 4 | |a Perovskite oxide thin films | |
| 650 | 4 | |a Biotechnology | |
| 700 | 1 | |a Liu, Bingwen |4 oth | |
| 700 | 1 | |a Zhao, Evan W |4 oth | |
| 700 | 1 | |a Jin, Ke |4 oth | |
| 700 | 1 | |a Du, Yingge |4 oth | |
| 700 | 1 | |a Neeway, James J |4 oth | |
| 700 | 1 | |a Ryan, Joseph V |4 oth | |
| 700 | 1 | |a Hu, Dehong |4 oth | |
| 700 | 1 | |a Zhang, Kelvin H. L |4 oth | |
| 700 | 1 | |a Hong, Mina |4 oth | |
| 700 | 1 | |a Le Guernic, Solenne |4 oth | |
| 700 | 1 | |a Thevuthasan, Suntharampilai |4 oth | |
| 700 | 1 | |a Wang, Fuyi |4 oth | |
| 700 | 1 | |a Zhu, Zihua |4 oth | |
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| 856 | 4 | 2 | |u http://www.ncbi.nlm.nih.gov/pubmed/25953490 |
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