Radiation tolerance of Si1−yCy source/drain n-type metal oxide semiconductor field effect transistors with different carbon concentrations
| Medienart: |
Artikel |
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| Erscheinungsjahr: |
2014 |
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| Erschienen: |
2014 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:557 |
|---|---|
| Enthalten in: |
Thin solid films - 557(2014) vom: 30. Apr., Seite 307-310 |
| Beteiligte Personen: |
Nakashima, Toshiyuki [VerfasserIn] |
|---|
| Umfang: |
4 |
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| Förderinstitution / Projekttitel: |
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OLC1939668115 |
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| 245 | 1 | 0 | |a Radiation tolerance of Si1−yCy source/drain n-type metal oxide semiconductor field effect transistors with different carbon concentrations |
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| 773 | 0 | 8 | |i Enthalten in |t Thin solid films |d Amsterdam [u.a.] Elsevier, 1967 |g 557(2014) vom: 30. Apr., Seite 307-310 |w (DE-627)129522287 |w (DE-600)212814-7 |w (DE-576)014938588 |x 0040-6090 |7 nnns |
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