An Atomically Resolved Schottky Barrier Height Approach for Bridging the Gap between Theory and Experiment at Metal-Semiconductor Heterojunctions
We propose an atomically resolved approach to capture the spatial variations of the Schottky barrier height (SBH) at metal-semiconductor heterojunctions. This proposed scheme, based on atom-specific partial density of states (PDOS) calculations, further enables calculation of the effective SBH that aligns with conductance measurements. We apply this approach to study the variations of SBH at MoS2Au heterojunctions, in which MoS2 contains conducting and semiconducting grain boundaries (GBs). Our results reveal that there are significant variations in SBH at atoms in the defected heterojunctions. Of particular interest is the fact that the SBH in some areas with extended defects approaches zero, indicating Ohmic contact. One important implication of this finding is that the effective SBH should be intrinsically dependent on the defect density and character. Remarkably, the obtained effective SBH values demonstrate good agreement with existing experimental measurements. Thus, the present study addresses two long-standing challenges associated with SBH in MoS2-metal heterojunctions: the wide variation in experimentally measured SBH values at MoS2@metal heterojunctions and the large discrepancy between density-functional-theory-predicted and experimentally measured SBH values. Our proposed approach points out a valuable pathway for understanding and manipulating SBHs at metal-semiconductor heterojunctions.
| Medienart: |
E-Artikel |
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| Erscheinungsjahr: |
2024 |
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| Erschienen: |
2024 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:16 |
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| Enthalten in: |
ACS applied materials & interfaces - 16(2024), 17 vom: 01. Mai, Seite 22166-22176 |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Sorkin, Viacheslav [VerfasserIn] |
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| Links: |
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| Themen: |
Atomically resolved SBH |
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| Anmerkungen: |
Date Revised 02.05.2024 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
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| doi: |
10.1021/acsami.4c02294 |
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| funding: |
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| Förderinstitution / Projekttitel: |
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| PPN (Katalog-ID): |
NLM37137085X |
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| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | NLM37137085X | ||
| 003 | DE-627 | ||
| 005 | 20240503000723.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 240424s2024 xx |||||o 00| ||eng c | ||
| 024 | 7 | |a 10.1021/acsami.4c02294 |2 doi | |
| 028 | 5 | 2 | |a pubmed24n1395.xml |
| 035 | |a (DE-627)NLM37137085X | ||
| 035 | |a (NLM)38648115 | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 100 | 1 | |a Sorkin, Viacheslav |e verfasserin |4 aut | |
| 245 | 1 | 3 | |a An Atomically Resolved Schottky Barrier Height Approach for Bridging the Gap between Theory and Experiment at Metal-Semiconductor Heterojunctions |
| 264 | 1 | |c 2024 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a ƒaComputermedien |b c |2 rdamedia | ||
| 338 | |a ƒa Online-Ressource |b cr |2 rdacarrier | ||
| 500 | |a Date Revised 02.05.2024 | ||
| 500 | |a published: Print-Electronic | ||
| 500 | |a Citation Status PubMed-not-MEDLINE | ||
| 520 | |a We propose an atomically resolved approach to capture the spatial variations of the Schottky barrier height (SBH) at metal-semiconductor heterojunctions. This proposed scheme, based on atom-specific partial density of states (PDOS) calculations, further enables calculation of the effective SBH that aligns with conductance measurements. We apply this approach to study the variations of SBH at MoS2Au heterojunctions, in which MoS2 contains conducting and semiconducting grain boundaries (GBs). Our results reveal that there are significant variations in SBH at atoms in the defected heterojunctions. Of particular interest is the fact that the SBH in some areas with extended defects approaches zero, indicating Ohmic contact. One important implication of this finding is that the effective SBH should be intrinsically dependent on the defect density and character. Remarkably, the obtained effective SBH values demonstrate good agreement with existing experimental measurements. Thus, the present study addresses two long-standing challenges associated with SBH in MoS2-metal heterojunctions: the wide variation in experimentally measured SBH values at MoS2@metal heterojunctions and the large discrepancy between density-functional-theory-predicted and experimentally measured SBH values. Our proposed approach points out a valuable pathway for understanding and manipulating SBHs at metal-semiconductor heterojunctions | ||
| 650 | 4 | |a Journal Article | |
| 650 | 4 | |a GBs | |
| 650 | 4 | |a atomically resolved SBH | |
| 650 | 4 | |a edge dislocations | |
| 650 | 4 | |a effective SBH | |
| 650 | 4 | |a spatial variation in SBH | |
| 700 | 1 | |a Zhou, Hangbo |e verfasserin |4 aut | |
| 700 | 1 | |a Yu, Zhi Gen |e verfasserin |4 aut | |
| 700 | 1 | |a Ang, Kah-Wee |e verfasserin |4 aut | |
| 700 | 1 | |a Zhang, Yong-Wei |e verfasserin |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t ACS applied materials & interfaces |d 2009 |g 16(2024), 17 vom: 01. Mai, Seite 22166-22176 |w (DE-627)NLM194100049 |x 1944-8252 |7 nnns |
| 773 | 1 | 8 | |g volume:16 |g year:2024 |g number:17 |g day:01 |g month:05 |g pages:22166-22176 |
| 856 | 4 | 0 | |u http://dx.doi.org/10.1021/acsami.4c02294 |3 Volltext |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a GBV_NLM | ||
| 951 | |a AR | ||
| 952 | |d 16 |j 2024 |e 17 |b 01 |c 05 |h 22166-22176 | ||