Spiro-Bifluorene-Cored Dopant-Free Conjugated Polymeric Hole-Transporting Materials Containing Passivation Parts for Inverted Perovskite Solar Cells
Two spiro-bifluorene-based dopant-free HTMs (X22 and X23) have been synthesized by facilely condensing spiro-bifluorene diamine with 3,4-ethylenedioxythiophene (EDOT)-5,7-dicarbonyl dichloride and 2,3,5,6-tetrafluoro-terephthaloyl dichloride, respectively. In the X22 molecule, lone pairs of electrons on the sulfur (S) and oxygen (O) functional groups interact with the perovskite materials. The hole mobility (μh) of X22 (3.9 × 10-4 cm2 V-1 S1-) is more than twice that of X23 (1.4 × 10-4 cm2 V-1 S1-). The conductivity (σ0) of X22 is 2.73 × 10-4 S cm-1, which is also higher than that of X23 (2.39 × 10-4 S cm-1). The EDOT moiety benefits the contact angle of CH3NH3PbI3 precursor solutions on HTMs as low as 24°. The X22-based device with an indium-doped tin oxide/hole transport material (HTM)/CH3NH3PbI3/phenyl-C61-butyric acid methyl ester (PC61BM)/bathocuproine/Ag structure achieves a power conversion efficiency (PCE) of 19.18%. The PCE of the device based on X23 containing fluorine is 18.70%, and the contact angle between HTM and the perovskite precursor solution is 32°. The X22- and X23-based devices at ambient temperature (≈25 °C) in N2 retain 86% and 79% of the initial PCE after 150 days. The effect of S, O, and F heteroatoms plays an important role in the side chain modification of HTMs, improving defect passivation in HTM/CH3NH3PbI3 interfaces by multiple functional groups.
| Medienart: |
E-Artikel |
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| Erscheinungsjahr: |
2024 |
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| Erschienen: |
2024 |
| Enthalten in: |
Zur Gesamtaufnahme - year:2024 |
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| Enthalten in: |
ACS applied materials & interfaces - (2024) vom: 09. Apr. |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Xu, Yuanyuan [VerfasserIn] |
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| Links: |
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| Themen: |
3,4-ethylenedioxythiophene |
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| Anmerkungen: |
Date Revised 09.04.2024 published: Print-Electronic Citation Status Publisher |
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| doi: |
10.1021/acsami.3c19125 |
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| funding: |
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| Förderinstitution / Projekttitel: |
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| PPN (Katalog-ID): |
NLM370823877 |
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| 245 | 1 | 0 | |a Spiro-Bifluorene-Cored Dopant-Free Conjugated Polymeric Hole-Transporting Materials Containing Passivation Parts for Inverted Perovskite Solar Cells |
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| 520 | |a Two spiro-bifluorene-based dopant-free HTMs (X22 and X23) have been synthesized by facilely condensing spiro-bifluorene diamine with 3,4-ethylenedioxythiophene (EDOT)-5,7-dicarbonyl dichloride and 2,3,5,6-tetrafluoro-terephthaloyl dichloride, respectively. In the X22 molecule, lone pairs of electrons on the sulfur (S) and oxygen (O) functional groups interact with the perovskite materials. The hole mobility (μh) of X22 (3.9 × 10-4 cm2 V-1 S1-) is more than twice that of X23 (1.4 × 10-4 cm2 V-1 S1-). The conductivity (σ0) of X22 is 2.73 × 10-4 S cm-1, which is also higher than that of X23 (2.39 × 10-4 S cm-1). The EDOT moiety benefits the contact angle of CH3NH3PbI3 precursor solutions on HTMs as low as 24°. The X22-based device with an indium-doped tin oxide/hole transport material (HTM)/CH3NH3PbI3/phenyl-C61-butyric acid methyl ester (PC61BM)/bathocuproine/Ag structure achieves a power conversion efficiency (PCE) of 19.18%. The PCE of the device based on X23 containing fluorine is 18.70%, and the contact angle between HTM and the perovskite precursor solution is 32°. The X22- and X23-based devices at ambient temperature (≈25 °C) in N2 retain 86% and 79% of the initial PCE after 150 days. The effect of S, O, and F heteroatoms plays an important role in the side chain modification of HTMs, improving defect passivation in HTM/CH3NH3PbI3 interfaces by multiple functional groups | ||
| 650 | 4 | |a Journal Article | |
| 650 | 4 | |a 3,4-ethylenedioxythiophene | |
| 650 | 4 | |a defect passivation | |
| 650 | 4 | |a hole-transport materials | |
| 650 | 4 | |a inverted perovskite solar cells | |
| 650 | 4 | |a photovoltaic performance | |
| 700 | 1 | |a Chen, Yu |e verfasserin |4 aut | |
| 700 | 1 | |a Zong, Xueping |e verfasserin |4 aut | |
| 700 | 1 | |a Luo, Jiangzhou |e verfasserin |4 aut | |
| 700 | 1 | |a Sun, Zhe |e verfasserin |4 aut | |
| 700 | 1 | |a Liang, Mao |e verfasserin |4 aut | |
| 700 | 1 | |a Xue, Song |e verfasserin |4 aut | |
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| 856 | 4 | 0 | |u http://dx.doi.org/10.1021/acsami.3c19125 |3 Volltext |
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