High-Performance Contact-Doped WSe2 Transistors Using TaSe2 Electrodes
Two-dimensional (2D) transitional metal dichalcogenides (TMDs) have garnered significant attention due to their potential for next-generation electronics, which require device scaling. However, the performance of TMD-based field-effect transistors (FETs) is greatly limited by the contact resistance. This study develops an effective strategy to optimize the contact resistance of WSe2 FETs by combining contact doping and 2D metallic electrode materials. The contact regions were doped using a laser, and the metallic TaSe2 flakes were stacked on doped WSe2 as electrodes. Doping the contact areas decreases the depletion width, while introducing the TaSe2 contact results in a lower Schottky barrier. This method significantly improves the electrical performance of the WSe2 FETs. The doped WSe2/TaSe2 contact exhibits an ultralow Schottky barrier height of 65 meV and a contact resistance of 11 kΩ·μm, which is a 50-fold reduction compared to the conventional Cr/Au contact. Our method offers a way on fabricating high-performance 2D FETs.
| Medienart: |
E-Artikel |
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| Erscheinungsjahr: |
2024 |
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| Erschienen: |
2024 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:16 |
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| Enthalten in: |
ACS applied materials & interfaces - 16(2024), 15 vom: 17. Apr., Seite 19247-19253 |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Liu, Bingjie [VerfasserIn] |
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| Links: |
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| Themen: |
Contact resistance |
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| Anmerkungen: |
Date Revised 18.04.2024 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
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| doi: |
10.1021/acsami.4c01605 |
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| funding: |
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| Förderinstitution / Projekttitel: |
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| PPN (Katalog-ID): |
NLM370804902 |
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| 520 | |a Two-dimensional (2D) transitional metal dichalcogenides (TMDs) have garnered significant attention due to their potential for next-generation electronics, which require device scaling. However, the performance of TMD-based field-effect transistors (FETs) is greatly limited by the contact resistance. This study develops an effective strategy to optimize the contact resistance of WSe2 FETs by combining contact doping and 2D metallic electrode materials. The contact regions were doped using a laser, and the metallic TaSe2 flakes were stacked on doped WSe2 as electrodes. Doping the contact areas decreases the depletion width, while introducing the TaSe2 contact results in a lower Schottky barrier. This method significantly improves the electrical performance of the WSe2 FETs. The doped WSe2/TaSe2 contact exhibits an ultralow Schottky barrier height of 65 meV and a contact resistance of 11 kΩ·μm, which is a 50-fold reduction compared to the conventional Cr/Au contact. Our method offers a way on fabricating high-performance 2D FETs | ||
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| 700 | 1 | |a Yue, Xiaofei |e verfasserin |4 aut | |
| 700 | 1 | |a Sheng, Chenxu |e verfasserin |4 aut | |
| 700 | 1 | |a Chen, Jiajun |e verfasserin |4 aut | |
| 700 | 1 | |a Tang, Chengjie |e verfasserin |4 aut | |
| 700 | 1 | |a Shan, Yabing |e verfasserin |4 aut | |
| 700 | 1 | |a Han, Jinkun |e verfasserin |4 aut | |
| 700 | 1 | |a Shen, Shuwen |e verfasserin |4 aut | |
| 700 | 1 | |a Wu, Wenxuan |e verfasserin |4 aut | |
| 700 | 1 | |a Li, Lijia |e verfasserin |4 aut | |
| 700 | 1 | |a Lu, Ye |e verfasserin |4 aut | |
| 700 | 1 | |a Hu, Laigui |e verfasserin |4 aut | |
| 700 | 1 | |a Liu, Ran |e verfasserin |4 aut | |
| 700 | 1 | |a Qiu, Zhi-Jun |e verfasserin |4 aut | |
| 700 | 1 | |a Cong, Chunxiao |e verfasserin |4 aut | |
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