The Failure Mechanism of Micro Thermoelectric Devices under the Action of the Temperature Field
The micro thermoelectric device (m-TED) boasts features such as adjustable volume, straightforward structure, and precise, rapid temperature control, positioning it as the only current solution for managing the temperature of microelectronic systems. It is extensively utilized in 5G optical modules, laser lidars, and infrared detection. Nevertheless, as the size of the m-TED diminishes, the growing proportion of interface damages the device's operational reliability, constraining the advancement of the m-TED. In this study, we used commercially available bismuth telluride materials to construct the m-TED. The device's reliability was tested under various temperatures: -40, 85, 125, and 150 °C. By deconstructing and analyzing the devices that failed during the tests, we discovered that the primary cause of device failure was the degradation of the solder layer. Moreover, we demonstrated that encapsulating the device with polydimethylsiloxane (PDMS) could effectively delay the deterioration of its performance. This study sparks new insights into the service reliability of m-TEDs and paves the way for further optimizing device interface design and enhancing the device manufacturing process.
| Medienart: |
E-Artikel |
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| Erscheinungsjahr: |
2024 |
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| Erschienen: |
2024 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:16 |
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| Enthalten in: |
ACS applied materials & interfaces - 16(2024), 13 vom: 03. Apr., Seite 16505-16514 |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Lyu, Jianan [VerfasserIn] |
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| Links: |
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| Themen: |
Bi2Te3 based material |
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| Anmerkungen: |
Date Revised 04.04.2024 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
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| doi: |
10.1021/acsami.4c00625 |
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| funding: |
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| Förderinstitution / Projekttitel: |
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| PPN (Katalog-ID): |
NLM370167937 |
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| 520 | |a The micro thermoelectric device (m-TED) boasts features such as adjustable volume, straightforward structure, and precise, rapid temperature control, positioning it as the only current solution for managing the temperature of microelectronic systems. It is extensively utilized in 5G optical modules, laser lidars, and infrared detection. Nevertheless, as the size of the m-TED diminishes, the growing proportion of interface damages the device's operational reliability, constraining the advancement of the m-TED. In this study, we used commercially available bismuth telluride materials to construct the m-TED. The device's reliability was tested under various temperatures: -40, 85, 125, and 150 °C. By deconstructing and analyzing the devices that failed during the tests, we discovered that the primary cause of device failure was the degradation of the solder layer. Moreover, we demonstrated that encapsulating the device with polydimethylsiloxane (PDMS) could effectively delay the deterioration of its performance. This study sparks new insights into the service reliability of m-TEDs and paves the way for further optimizing device interface design and enhancing the device manufacturing process | ||
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| 650 | 4 | |a micro thermoelectric device | |
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| 700 | 1 | |a Yang, Dongwang |e verfasserin |4 aut | |
| 700 | 1 | |a Liu, Yutian |e verfasserin |4 aut | |
| 700 | 1 | |a Li, Junhao |e verfasserin |4 aut | |
| 700 | 1 | |a Zhang, Zinan |e verfasserin |4 aut | |
| 700 | 1 | |a Li, Zhenming |e verfasserin |4 aut | |
| 700 | 1 | |a Liu, Mingyang |e verfasserin |4 aut | |
| 700 | 1 | |a Liu, Wei |e verfasserin |4 aut | |
| 700 | 1 | |a Ren, Zhigang |e verfasserin |4 aut | |
| 700 | 1 | |a Liu, Hongjing |e verfasserin |4 aut | |
| 700 | 1 | |a Wu, Jinsong |e verfasserin |4 aut | |
| 700 | 1 | |a Tang, Xinfeng |e verfasserin |4 aut | |
| 700 | 1 | |a Yan, Yonggao |e verfasserin |4 aut | |
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