Large and Pressure-Dependent c-Axis Piezoresistivity of Highly Oriented Pyrolytic Graphite near Zero Pressure
The c-axis piezoresistivity is a fundamental and important parameter of graphite, but its value near zero pressure has not been well determined. Herein, a new method for studying the c-axis piezoresistivity of van der Waals materials near zero pressure is developed on the basis of in situ scanning electron microscopy and finite element simulation. The c-axis piezoresistivity of microscale highly oriented pyrolytic graphite (HOPG) is found to show a large value of 5.68 × 10-5 kPa-1 near zero pressure and decreases by 2 orders of magnitude to the established value of ∼10-7 kPa-1 when the pressure increases to 200 MPa. By modulating the serial tunneling barrier model on the basis of the stacking faults, we describe the c-axis electrical transport of HOPG under compression. The large c-axis piezoresistivity near zero pressure and its large decrease in magnitude with pressure are attributed to the rapid stiffening of the electromechanical properties under compression.
Medienart: |
E-Artikel |
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Erscheinungsjahr: |
2024 |
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Erschienen: |
2024 |
Enthalten in: |
Zur Gesamtaufnahme - year:2024 |
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Enthalten in: |
Nano letters - (2024) vom: 25. März |
Sprache: |
Englisch |
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Beteiligte Personen: |
Wang, Bingjie [VerfasserIn] |
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Links: |
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Themen: |
C-axis piezoresistivity |
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Anmerkungen: |
Date Revised 25.03.2024 published: Print-Electronic Citation Status Publisher |
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doi: |
10.1021/acs.nanolett.4c00687 |
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funding: |
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Förderinstitution / Projekttitel: |
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PPN (Katalog-ID): |
NLM370154738 |
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520 | |a The c-axis piezoresistivity is a fundamental and important parameter of graphite, but its value near zero pressure has not been well determined. Herein, a new method for studying the c-axis piezoresistivity of van der Waals materials near zero pressure is developed on the basis of in situ scanning electron microscopy and finite element simulation. The c-axis piezoresistivity of microscale highly oriented pyrolytic graphite (HOPG) is found to show a large value of 5.68 × 10-5 kPa-1 near zero pressure and decreases by 2 orders of magnitude to the established value of ∼10-7 kPa-1 when the pressure increases to 200 MPa. By modulating the serial tunneling barrier model on the basis of the stacking faults, we describe the c-axis electrical transport of HOPG under compression. The large c-axis piezoresistivity near zero pressure and its large decrease in magnitude with pressure are attributed to the rapid stiffening of the electromechanical properties under compression | ||
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700 | 1 | |a Fang, Zheng |e verfasserin |4 aut | |
700 | 1 | |a Jiang, Yifan |e verfasserin |4 aut | |
700 | 1 | |a Li, Shuo |e verfasserin |4 aut | |
700 | 1 | |a Zhan, Fangyuan |e verfasserin |4 aut | |
700 | 1 | |a Dai, Zhaohe |e verfasserin |4 aut | |
700 | 1 | |a Chen, Qing |e verfasserin |4 aut | |
700 | 1 | |a Wei, Xianlong |e verfasserin |4 aut | |
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