Grating-assisted hot-electron photodetectors for S- and C-band telecommunication
© 2024 IOP Publishing Ltd..
Although outstanding detectivities, InGaAs photodetectors for optic fiber communication are often costly due to the need for cooling. Therefore, cryogen-free and cost-effective alternatives working in telecommunication bands are highly desired. Here, we present a design of hot-electron photodetectors (HE PDs) with attributes of room-temperature operation and strong optical absorption over S and C bands (from 1460 to 1565 nm). The designed HE PD consists of a metal-semiconductor-metal hot-electron stack integrated with a front grating. Optical simulations reveal that mode hybridizations between Fabry-Pérot resonance and grating-induced surface plasmon excitation lead to high absorption efficiencies (≥0.9) covering S and C bands. Probability-based electrical calculations clarify that device responsivity is mainly determined by working wavelength on the premise of broadband strong absorption. Moreover, through comparison studies between the grating-assisted HE PD and purely planar microcavity system that serves as a reference, we highlight the design superiorities in average absorption and average responsivity with optimized values of 0.97 and 0.73 mA W-1, respectively. The upgraded peformances of the designed device are promising for efficient photoelectric conversion in optic fiber communication systems.
| Medienart: |
E-Artikel |
|---|
| Erscheinungsjahr: |
2024 |
|---|---|
| Erschienen: |
2024 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:35 |
|---|---|
| Enthalten in: |
Nanotechnology - 35(2024), 27 vom: 15. Apr. |
| Sprache: |
Englisch |
|---|
| Beteiligte Personen: |
Shao, Weijia [VerfasserIn] |
|---|
| Links: |
|---|
| Themen: |
Hot electrons |
|---|
| Anmerkungen: |
Date Revised 15.04.2024 published: Electronic Citation Status PubMed-not-MEDLINE |
|---|
| doi: |
10.1088/1361-6528/ad3739 |
|---|
| funding: |
|
|---|---|
| Förderinstitution / Projekttitel: |
|
| PPN (Katalog-ID): |
NLM37011678X |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | NLM37011678X | ||
| 003 | DE-627 | ||
| 005 | 20240415233532.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 240325s2024 xx |||||o 00| ||eng c | ||
| 024 | 7 | |a 10.1088/1361-6528/ad3739 |2 doi | |
| 028 | 5 | 2 | |a pubmed24n1376.xml |
| 035 | |a (DE-627)NLM37011678X | ||
| 035 | |a (NLM)38522108 | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 100 | 1 | |a Shao, Weijia |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Grating-assisted hot-electron photodetectors for S- and C-band telecommunication |
| 264 | 1 | |c 2024 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a ƒaComputermedien |b c |2 rdamedia | ||
| 338 | |a ƒa Online-Ressource |b cr |2 rdacarrier | ||
| 500 | |a Date Revised 15.04.2024 | ||
| 500 | |a published: Electronic | ||
| 500 | |a Citation Status PubMed-not-MEDLINE | ||
| 520 | |a © 2024 IOP Publishing Ltd. | ||
| 520 | |a Although outstanding detectivities, InGaAs photodetectors for optic fiber communication are often costly due to the need for cooling. Therefore, cryogen-free and cost-effective alternatives working in telecommunication bands are highly desired. Here, we present a design of hot-electron photodetectors (HE PDs) with attributes of room-temperature operation and strong optical absorption over S and C bands (from 1460 to 1565 nm). The designed HE PD consists of a metal-semiconductor-metal hot-electron stack integrated with a front grating. Optical simulations reveal that mode hybridizations between Fabry-Pérot resonance and grating-induced surface plasmon excitation lead to high absorption efficiencies (≥0.9) covering S and C bands. Probability-based electrical calculations clarify that device responsivity is mainly determined by working wavelength on the premise of broadband strong absorption. Moreover, through comparison studies between the grating-assisted HE PD and purely planar microcavity system that serves as a reference, we highlight the design superiorities in average absorption and average responsivity with optimized values of 0.97 and 0.73 mA W-1, respectively. The upgraded peformances of the designed device are promising for efficient photoelectric conversion in optic fiber communication systems | ||
| 650 | 4 | |a Journal Article | |
| 650 | 4 | |a S and C bands | |
| 650 | 4 | |a hot electrons | |
| 650 | 4 | |a mode hybridization | |
| 650 | 4 | |a photodetectors | |
| 700 | 1 | |a Cui, Weihao |e verfasserin |4 aut | |
| 700 | 1 | |a Xin, Yixiao |e verfasserin |4 aut | |
| 700 | 1 | |a Hu, Junhui |e verfasserin |4 aut | |
| 700 | 1 | |a Li, Xiaofeng |e verfasserin |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Nanotechnology |d 2003 |g 35(2024), 27 vom: 15. Apr. |w (DE-627)NLM160620376 |x 1361-6528 |7 nnns |
| 773 | 1 | 8 | |g volume:35 |g year:2024 |g number:27 |g day:15 |g month:04 |
| 856 | 4 | 0 | |u http://dx.doi.org/10.1088/1361-6528/ad3739 |3 Volltext |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a GBV_NLM | ||
| 951 | |a AR | ||
| 952 | |d 35 |j 2024 |e 27 |b 15 |c 04 | ||