Highly Efficient Room-Temperature Spin-Orbit-Torque Switching in a Van der Waals Heterostructure of Topological Insulator and Ferromagnet
© 2024 The Authors. Advanced Science published by Wiley‐VCH GmbH..
All-Van der Waals (vdW)-material-based heterostructures with atomically sharp interfaces offer a versatile platform for high-performing spintronic functionalities at room temperature. One of the key components is vdW topological insulators (TIs), which can produce a strong spin-orbit-torque (SOT) through the spin-momentum locking of their topological surface state (TSS). However, the relatively low conductance of the TSS introduces a current leakage problem through the bulk states of the TI or the adjacent ferromagnetic metal layers, reducing the interfacial charge-to-spin conversion efficiency (qICS). Here, a vdW heterostructure is used consisting of atomically-thin layers of a bulk-insulating TI Sn-doped Bi1.1Sb0.9Te2S1 and a room-temperature ferromagnet Fe3GaTe2, to enhance the relative current ratio on the TSS up to ≈20%. The resulting qICS reaches ≈1.65 nm-1 and the critical current density Jc ≈0.9 × 106 Acm-2 at 300 K, surpassing the performance of TI-based and heavy-metal-based SOT devices. These findings demonstrate that an all-vdW heterostructure with thickness optimization offers a promising platform for efficient current-controlled magnetization switching at room temperature.
| Medienart: |
E-Artikel |
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| Erscheinungsjahr: |
2024 |
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| Erschienen: |
2024 |
| Enthalten in: |
Zur Gesamtaufnahme - year:2024 |
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| Enthalten in: |
Advanced science (Weinheim, Baden-Wurttemberg, Germany) - (2024) vom: 22. März, Seite e2400893 |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Choi, Gyu Seung [VerfasserIn] |
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| Links: |
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| Themen: |
2D ferromagnet |
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| Anmerkungen: |
Date Revised 23.03.2024 published: Print-Electronic Citation Status Publisher |
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| doi: |
10.1002/advs.202400893 |
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| funding: |
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| Förderinstitution / Projekttitel: |
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| PPN (Katalog-ID): |
NLM370096274 |
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| 520 | |a © 2024 The Authors. Advanced Science published by Wiley‐VCH GmbH. | ||
| 520 | |a All-Van der Waals (vdW)-material-based heterostructures with atomically sharp interfaces offer a versatile platform for high-performing spintronic functionalities at room temperature. One of the key components is vdW topological insulators (TIs), which can produce a strong spin-orbit-torque (SOT) through the spin-momentum locking of their topological surface state (TSS). However, the relatively low conductance of the TSS introduces a current leakage problem through the bulk states of the TI or the adjacent ferromagnetic metal layers, reducing the interfacial charge-to-spin conversion efficiency (qICS). Here, a vdW heterostructure is used consisting of atomically-thin layers of a bulk-insulating TI Sn-doped Bi1.1Sb0.9Te2S1 and a room-temperature ferromagnet Fe3GaTe2, to enhance the relative current ratio on the TSS up to ≈20%. The resulting qICS reaches ≈1.65 nm-1 and the critical current density Jc ≈0.9 × 106 Acm-2 at 300 K, surpassing the performance of TI-based and heavy-metal-based SOT devices. These findings demonstrate that an all-vdW heterostructure with thickness optimization offers a promising platform for efficient current-controlled magnetization switching at room temperature | ||
| 650 | 4 | |a Journal Article | |
| 650 | 4 | |a 2D ferromagnet | |
| 650 | 4 | |a Van der Waals heterostructure | |
| 650 | 4 | |a charge‐to‐spin conversion | |
| 650 | 4 | |a spin‐orbit‐torque | |
| 650 | 4 | |a topological insulator | |
| 700 | 1 | |a Park, Sungyu |e verfasserin |4 aut | |
| 700 | 1 | |a An, Eun-Su |e verfasserin |4 aut | |
| 700 | 1 | |a Bae, Juhong |e verfasserin |4 aut | |
| 700 | 1 | |a Shin, Inseob |e verfasserin |4 aut | |
| 700 | 1 | |a Kang, Beom Tak |e verfasserin |4 aut | |
| 700 | 1 | |a Won, Choong Jae |e verfasserin |4 aut | |
| 700 | 1 | |a Cheong, Sang-Wook |e verfasserin |4 aut | |
| 700 | 1 | |a Lee, Hyun-Woo |e verfasserin |4 aut | |
| 700 | 1 | |a Lee, Gil-Ho |e verfasserin |4 aut | |
| 700 | 1 | |a Cho, Won Joon |e verfasserin |4 aut | |
| 700 | 1 | |a Kim, Jun Sung |e verfasserin |4 aut | |
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