Correlation Measurements for Carbon Nanotubes with Quantum Defects

Single-photon sources are essential building blocks for the development of photonic quantum technology. Regarding potential practical application, an on-demand electrically driven quantum-light emitter on a chip is notably crucial for photonic integrated circuits. Here, we propose functionalized single-walled carbon nanotube field-effect transistors as a promising solid-state quantum-light source by demonstrating photon antibunching behavior via electrical excitation. The sp3 quantum defects were formed on the surface of (7, 5) carbon nanotubes by 3,5-dichlorophenyl functionalization, and individual carbon nanotubes were wired to graphene electrode pairs. Filtered electroluminescent defect-state emission at 77 K was coupled into a Hanbury Brown and Twiss experiment setup, and single-photon emission was observed by performing second-order correlation function measurements. We discuss the dependence of the intensity correlation measurement on electrical power and emission wavelength, highlighting the challenges of performing such measurements while simultaneously analyzing acquired data. Our results indicate a route toward room-temperature electrically triggered single-photon emission.

Medienart:

E-Artikel

Erscheinungsjahr:

2024

Erschienen:

2024

Enthalten in:

Zur Gesamtaufnahme - volume:18

Enthalten in:

ACS nano - 18(2024), 13 vom: 02. Apr., Seite 9525-9534

Sprache:

Englisch

Beteiligte Personen:

Li, Min-Ken [VerfasserIn]
Dehm, Simone [VerfasserIn]
Kappes, Manfred M [VerfasserIn]
Hennrich, Frank [VerfasserIn]
Krupke, Ralph [VerfasserIn]

Links:

Volltext

Themen:

Carbon nanotubes
Defects
Electroluminescence
Excitons
Graphene
Journal Article
Second-order correlation function measurement

Anmerkungen:

Date Revised 02.04.2024

published: Print-Electronic

Citation Status PubMed-not-MEDLINE

doi:

10.1021/acsnano.3c12530

funding:

Förderinstitution / Projekttitel:

PPN (Katalog-ID):

NLM370026977