Self-Competitive Growth of CsPbBr3 Planar Nanowire Array
Semiconductor planar nanowire arrays (PNAs) are essential for achieving large-scale device integration. Direct heteroepitaxy of PNAs on a flat substrate is constrained by the mismatch in crystalline symmetry and lattice parameters between the substrate and epitaxial nanowires. This study presents a novel approach termed "self-competitive growth" for heteroepitaxy of CsPbBr3 PNAs on mica. The key to inducing the self-competitive growth of CsPbBr3 PNAs on mica involves restricting the nucleation of CsPbBr3 nanowires in a high-adsorption region, which is accomplished by overlaying graphite sheets on the mica surface. Theoretical calculations and experimental results demonstrate that CsPbBr3 nanowires oriented perpendicular to the boundary of the high-adsorption area exhibit greater competitiveness in intercepting the growth of nanowires in the other two directions, resulting in PNAs with a consistent orientation. Moreover, these PNAs exhibit low-threshold and stable amplified spontaneous emission under one-, two-, and three-photon excitation, indicating their potential for an integrated laser array.
| Medienart: |
E-Artikel |
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| Erscheinungsjahr: |
2024 |
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| Erschienen: |
2024 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:24 |
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| Enthalten in: |
Nano letters - 24(2024), 12 vom: 27. März, Seite 3750-3758 |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Fan, Chao [VerfasserIn] |
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| Links: |
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| Themen: |
Amplified spontaneous emission |
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| Anmerkungen: |
Date Revised 27.03.2024 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
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| doi: |
10.1021/acs.nanolett.4c00271 |
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| funding: |
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| Förderinstitution / Projekttitel: |
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| 520 | |a Semiconductor planar nanowire arrays (PNAs) are essential for achieving large-scale device integration. Direct heteroepitaxy of PNAs on a flat substrate is constrained by the mismatch in crystalline symmetry and lattice parameters between the substrate and epitaxial nanowires. This study presents a novel approach termed "self-competitive growth" for heteroepitaxy of CsPbBr3 PNAs on mica. The key to inducing the self-competitive growth of CsPbBr3 PNAs on mica involves restricting the nucleation of CsPbBr3 nanowires in a high-adsorption region, which is accomplished by overlaying graphite sheets on the mica surface. Theoretical calculations and experimental results demonstrate that CsPbBr3 nanowires oriented perpendicular to the boundary of the high-adsorption area exhibit greater competitiveness in intercepting the growth of nanowires in the other two directions, resulting in PNAs with a consistent orientation. Moreover, these PNAs exhibit low-threshold and stable amplified spontaneous emission under one-, two-, and three-photon excitation, indicating their potential for an integrated laser array | ||
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| 700 | 1 | |a Xu, Xing |e verfasserin |4 aut | |
| 700 | 1 | |a Wang, Peng |e verfasserin |4 aut | |
| 700 | 1 | |a Zhang, Qinglin |e verfasserin |4 aut | |
| 700 | 1 | |a Dai, Xingliang |e verfasserin |4 aut | |
| 700 | 1 | |a Yang, Ke |e verfasserin |4 aut | |
| 700 | 1 | |a He, Haiping |e verfasserin |4 aut | |
| 700 | 1 | |a Ye, Zhizhen |e verfasserin |4 aut | |
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