Coexisting Magnetism, Ferroelectric, and Ferrovalley Multiferroic in Stacking-Dependent Two-Dimensional Materials
Two-dimensional (2D) multiferroic materials have widespread application prospects in facilitating the integration and miniaturization of nanodevices. However, the magnetic, ferroelectric, and ferrovalley properties in one 2D material are rarely coupled. Here, we propose a mechanism for manipulating magnetism, ferroelectric, and valley polarization by interlayer sliding in a 2D bilayer material. Monolayer GdI2 is a ferromagnetic semiconductor with a valley polarization of up to 155.5 meV. More interestingly, the magnetism and valley polarization of bilayer GdI2 can be strongly coupled by sliding ferroelectricity, making these tunable and reversible. In addition, we uncover the microscopic mechanism of the magnetic phase transition by a spin Hamiltonian and electron hopping between layers. Our findings offer a new direction for investigating 2D multiferroic devices with implications for next-generation electronic, valleytronic, and spintronic devices.
| Errataetall: | |
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| Medienart: |
E-Artikel |
| Erscheinungsjahr: |
2024 |
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| Erschienen: |
2024 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:24 |
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| Enthalten in: |
Nano letters - 24(2024), 11 vom: 20. März, Seite 3541-3547 |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Xun, Wei [VerfasserIn] |
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| Links: |
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| Themen: |
D-orbital hopping |
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| Anmerkungen: |
Date Revised 22.04.2024 published: Print-Electronic ErratumIn: Nano Lett. 2024 Apr 22;:. - PMID 38648356 Citation Status PubMed-not-MEDLINE |
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| doi: |
10.1021/acs.nanolett.4c00597 |
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| funding: |
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| Förderinstitution / Projekttitel: |
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NLM369416147 |
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| 500 | |a ErratumIn: Nano Lett. 2024 Apr 22;:. - PMID 38648356 | ||
| 500 | |a Citation Status PubMed-not-MEDLINE | ||
| 520 | |a Two-dimensional (2D) multiferroic materials have widespread application prospects in facilitating the integration and miniaturization of nanodevices. However, the magnetic, ferroelectric, and ferrovalley properties in one 2D material are rarely coupled. Here, we propose a mechanism for manipulating magnetism, ferroelectric, and valley polarization by interlayer sliding in a 2D bilayer material. Monolayer GdI2 is a ferromagnetic semiconductor with a valley polarization of up to 155.5 meV. More interestingly, the magnetism and valley polarization of bilayer GdI2 can be strongly coupled by sliding ferroelectricity, making these tunable and reversible. In addition, we uncover the microscopic mechanism of the magnetic phase transition by a spin Hamiltonian and electron hopping between layers. Our findings offer a new direction for investigating 2D multiferroic devices with implications for next-generation electronic, valleytronic, and spintronic devices | ||
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| 700 | 1 | |a Sun, Hanbo |e verfasserin |4 aut | |
| 700 | 1 | |a Zhang, Weixi |e verfasserin |4 aut | |
| 700 | 1 | |a Wu, Yin-Zhong |e verfasserin |4 aut | |
| 700 | 1 | |a Li, Ping |e verfasserin |4 aut | |
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