Construction of SnO2 buffer layer and analysis of its interface modification for Li and Li1.5Al0.5Ge1.5(PO4)3 in solid-state batteries
Copyright © 2024 Elsevier Inc. All rights reserved..
SnO2 layer between Li1.5Al0.5Ge1.5(PO4)3 (LAGP) and lithium anode was prepared through simple scratch-coating process to improve interface properties. The physical phase, morphology, and electrochemical properties of Li/SnO2/LAGP structure were characterized by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, and electrochemical analytical methods. It was found that SnO2 layer effectively improved the interface stability of LAGP and lithium anode. The prepared Li/SnO2/LAGP/SnO2/Li symmetric cell exhibited a large critical current density of 1.8 mA cm-2 and demonstrated excellent cycling characteristics. The polarization voltages of symmetric cell were 0.1 V and 0.8 V after 1000 h of cycling at current densities of 0.04 mA cm-2 and 0.5 mA cm-2, respectively. Li/SnO2LAGP/LiFePO4 solid-state full cells were also assembled, exhibiting a discharge specific capacity of 150 mAh g-1 after 200 cycles at 0.1C with capacity retention rate of 96 %. The good interface properties of Li/SnO2/LAGP structure are attributed to the transformation of SnO2 layer into a buffer layer containing Li2O, Sn0, and LixSny alloy during cycling process, which effectively inhibits the reduction reaction between LAGP and lithium anode.
| Medienart: |
E-Artikel |
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| Erscheinungsjahr: |
2024 |
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| Erschienen: |
2024 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:663 |
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| Enthalten in: |
Journal of colloid and interface science - 663(2024) vom: 21. März, Seite 132-142 |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Song, Jinhong [VerfasserIn] |
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| Links: |
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| Themen: |
DRT-reconstructed impedance |
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| Anmerkungen: |
Date Revised 20.03.2024 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
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| doi: |
10.1016/j.jcis.2024.02.151 |
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| funding: |
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| Förderinstitution / Projekttitel: |
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| PPN (Katalog-ID): |
NLM368848000 |
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| 245 | 1 | 0 | |a Construction of SnO2 buffer layer and analysis of its interface modification for Li and Li1.5Al0.5Ge1.5(PO4)3 in solid-state batteries |
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| 500 | |a Date Revised 20.03.2024 | ||
| 500 | |a published: Print-Electronic | ||
| 500 | |a Citation Status PubMed-not-MEDLINE | ||
| 520 | |a Copyright © 2024 Elsevier Inc. All rights reserved. | ||
| 520 | |a SnO2 layer between Li1.5Al0.5Ge1.5(PO4)3 (LAGP) and lithium anode was prepared through simple scratch-coating process to improve interface properties. The physical phase, morphology, and electrochemical properties of Li/SnO2/LAGP structure were characterized by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, and electrochemical analytical methods. It was found that SnO2 layer effectively improved the interface stability of LAGP and lithium anode. The prepared Li/SnO2/LAGP/SnO2/Li symmetric cell exhibited a large critical current density of 1.8 mA cm-2 and demonstrated excellent cycling characteristics. The polarization voltages of symmetric cell were 0.1 V and 0.8 V after 1000 h of cycling at current densities of 0.04 mA cm-2 and 0.5 mA cm-2, respectively. Li/SnO2LAGP/LiFePO4 solid-state full cells were also assembled, exhibiting a discharge specific capacity of 150 mAh g-1 after 200 cycles at 0.1C with capacity retention rate of 96 %. The good interface properties of Li/SnO2/LAGP structure are attributed to the transformation of SnO2 layer into a buffer layer containing Li2O, Sn0, and LixSny alloy during cycling process, which effectively inhibits the reduction reaction between LAGP and lithium anode | ||
| 650 | 4 | |a Journal Article | |
| 650 | 4 | |a DRT-reconstructed impedance | |
| 650 | 4 | |a Interfacial modification | |
| 650 | 4 | |a LAGP electrolyte | |
| 650 | 4 | |a Solid-state battery | |
| 700 | 1 | |a Zhang, Chen |e verfasserin |4 aut | |
| 700 | 1 | |a Zheng, Zejian |e verfasserin |4 aut | |
| 700 | 1 | |a Huo, Shizhe |e verfasserin |4 aut | |
| 700 | 1 | |a Lin, Yihan |e verfasserin |4 aut | |
| 700 | 1 | |a Yang, Fei |e verfasserin |4 aut | |
| 700 | 1 | |a Liu, Lei |e verfasserin |4 aut | |
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