Air-Stable Self-Driven UV Photodetectors on Controllable Lead-Free CsCu2I3 Microwire Arrays
The rapid evolution of the Internet of Things has engendered increased requirements for low-cost, self-powered UV photodetectors. Herein, high-performance self-driven UV photodetectors are fabricated by designing asymmetric metal-semiconductor-metal structures on the high-quality large-area CsCu2I3 microwire arrays. The asymmetrical depletion region doubles the photocurrent and response speed compared to the symmetric structure device, leading to a high responsivity of 233 mA/W to 355 nm radiation. Notably, at 0 V bias, the asymmetric device produces an open-circuit voltage of 356 mV and drives to a short-circuit current of 372 pA; meanwhile, the switch ratio (Iph/Idark) reaches up to 103, indicating its excellent potential for detecting weak light. Furthermore, the device maintains stable responses throughout 10000 UV-light switch cycles, with negligible degradation even after 90-day storage in air. Our work establishes that CsCu2I3 is a good candidate for self-powered UV detection and thoroughly demonstrates its potential as a passive device.
| Medienart: |
E-Artikel |
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| Erscheinungsjahr: |
2024 |
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| Erschienen: |
2024 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:16 |
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| Enthalten in: |
ACS applied materials & interfaces - 16(2024), 8 vom: 28. Feb., Seite 10398-10406 |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Zhang, Zhi-Hong [VerfasserIn] |
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| Links: |
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| Themen: |
CsCu2I3 |
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| Anmerkungen: |
Date Revised 06.03.2024 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
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| doi: |
10.1021/acsami.3c17881 |
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| funding: |
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| Förderinstitution / Projekttitel: |
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| PPN (Katalog-ID): |
NLM368710025 |
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| 520 | |a The rapid evolution of the Internet of Things has engendered increased requirements for low-cost, self-powered UV photodetectors. Herein, high-performance self-driven UV photodetectors are fabricated by designing asymmetric metal-semiconductor-metal structures on the high-quality large-area CsCu2I3 microwire arrays. The asymmetrical depletion region doubles the photocurrent and response speed compared to the symmetric structure device, leading to a high responsivity of 233 mA/W to 355 nm radiation. Notably, at 0 V bias, the asymmetric device produces an open-circuit voltage of 356 mV and drives to a short-circuit current of 372 pA; meanwhile, the switch ratio (Iph/Idark) reaches up to 103, indicating its excellent potential for detecting weak light. Furthermore, the device maintains stable responses throughout 10000 UV-light switch cycles, with negligible degradation even after 90-day storage in air. Our work establishes that CsCu2I3 is a good candidate for self-powered UV detection and thoroughly demonstrates its potential as a passive device | ||
| 650 | 4 | |a Journal Article | |
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| 650 | 4 | |a microwire arrays | |
| 650 | 4 | |a perovskite | |
| 650 | 4 | |a self-driven photodetector | |
| 650 | 4 | |a ultraviolet photodetection | |
| 700 | 1 | |a Yan, Shan-Shan |e verfasserin |4 aut | |
| 700 | 1 | |a Chen, Yu-Long |e verfasserin |4 aut | |
| 700 | 1 | |a Lian, Zhen-Dong |e verfasserin |4 aut | |
| 700 | 1 | |a Fu, Ai |e verfasserin |4 aut | |
| 700 | 1 | |a Kong, You-Chao |e verfasserin |4 aut | |
| 700 | 1 | |a Li, Lin |e verfasserin |4 aut | |
| 700 | 1 | |a Su, Shi-Chen |e verfasserin |4 aut | |
| 700 | 1 | |a Ng, Kar-Wei |e verfasserin |4 aut | |
| 700 | 1 | |a Wei, Zhi-Peng |e verfasserin |4 aut | |
| 700 | 1 | |a Liu, Hong-Chao |e verfasserin |4 aut | |
| 700 | 1 | |a Wang, Shuang-Peng |e verfasserin |4 aut | |
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