Constructing Ultra-Shallow Near-Edge States for Efficient and Stable Perovskite Solar Cells
© 2024 Wiley‐VCH GmbH..
Electronic band structure engineering of metal-halide perovskites (MHP) lies at the core of fundamental materials research and photovoltaic applications. However, reconfiguring the band structures in MHP for optimized electronic properties remains challenging. This article reports a generic strategy for constructing near-edge states to improve carrier properties, leading to enhanced device performances. The near-edge states are designed around the valence band edge using theoretical prediction and constructed through tailored material engineering. These states are experimentally revealed with activation energies of around 23 milli-electron volts by temperature-dependent time-resolved spectroscopy. Such small activation energies enable prolonged carrier lifetime with efficient carrier transition dynamics and low non-radiative recombination losses, as corroborated by the millisecond lifetimes of microwave conductivity. By constructing near-edge states in positive-intrinsic-negative inverted cells, a champion efficiency of 25.4% (25.0% certified) for a 0.07-cm2 cell and 23.6% (22.7% certified) for a 1-cm2 cell is achieved. The most stable encapsulated cell retains 90% of its initial efficiency after 1100 h of maximum power point tracking under one sun illumination (100 mW cm-2) at 65 °C in ambient air.
Medienart: |
E-Artikel |
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Erscheinungsjahr: |
2024 |
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Erschienen: |
2024 |
Enthalten in: |
Zur Gesamtaufnahme - volume:36 |
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Enthalten in: |
Advanced materials (Deerfield Beach, Fla.) - 36(2024), 15 vom: 04. Apr., Seite e2309487 |
Sprache: |
Englisch |
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Beteiligte Personen: |
Zhu, Xueliang [VerfasserIn] |
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Links: |
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Themen: |
Band structure engineering |
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Anmerkungen: |
Date Revised 11.04.2024 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
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doi: |
10.1002/adma.202309487 |
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funding: |
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Förderinstitution / Projekttitel: |
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PPN (Katalog-ID): |
NLM366652729 |
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520 | |a Electronic band structure engineering of metal-halide perovskites (MHP) lies at the core of fundamental materials research and photovoltaic applications. However, reconfiguring the band structures in MHP for optimized electronic properties remains challenging. This article reports a generic strategy for constructing near-edge states to improve carrier properties, leading to enhanced device performances. The near-edge states are designed around the valence band edge using theoretical prediction and constructed through tailored material engineering. These states are experimentally revealed with activation energies of around 23 milli-electron volts by temperature-dependent time-resolved spectroscopy. Such small activation energies enable prolonged carrier lifetime with efficient carrier transition dynamics and low non-radiative recombination losses, as corroborated by the millisecond lifetimes of microwave conductivity. By constructing near-edge states in positive-intrinsic-negative inverted cells, a champion efficiency of 25.4% (25.0% certified) for a 0.07-cm2 cell and 23.6% (22.7% certified) for a 1-cm2 cell is achieved. The most stable encapsulated cell retains 90% of its initial efficiency after 1100 h of maximum power point tracking under one sun illumination (100 mW cm-2) at 65 °C in ambient air | ||
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700 | 1 | |a Xiong, Wenqi |e verfasserin |4 aut | |
700 | 1 | |a Hu, Chong |e verfasserin |4 aut | |
700 | 1 | |a Mo, Kangwei |e verfasserin |4 aut | |
700 | 1 | |a Yang, Man |e verfasserin |4 aut | |
700 | 1 | |a Li, Yanyan |e verfasserin |4 aut | |
700 | 1 | |a Li, Ruiming |e verfasserin |4 aut | |
700 | 1 | |a Shen, Chen |e verfasserin |4 aut | |
700 | 1 | |a Liu, Yong |e verfasserin |4 aut | |
700 | 1 | |a Liu, Xiaoze |e verfasserin |4 aut | |
700 | 1 | |a Wang, Sheng |e verfasserin |4 aut | |
700 | 1 | |a Lin, Qianqian |e verfasserin |4 aut | |
700 | 1 | |a Yuan, Shengjun |e verfasserin |4 aut | |
700 | 1 | |a Liu, Zhengyou |e verfasserin |4 aut | |
700 | 1 | |a Wang, Zhiping |e verfasserin |4 aut | |
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