Band Engineering Through Pb-Doping of Nanocrystal Building Blocks to Enhance Thermoelectric Performance in Cu3 SbSe4
© 2023 Wiley-VCH GmbH..
Developing cost-effective and high-performance thermoelectric (TE) materials to assemble efficient TE devices presents a multitude of challenges and opportunities. Cu3 SbSe4 is a promising p-type TE material based on relatively earth abundant elements. However, the challenge lies in its poor electrical conductivity. Herein, an efficient and scalable solution-based approach is developed to synthesize high-quality Cu3 SbSe4 nanocrystals doped with Pb at the Sb site. After ligand displacement and annealing treatments, the dried powders are consolidated into dense pellets, and their TE properties are investigated. Pb doping effectively increases the charge carrier concentration, resulting in a significant increase in electrical conductivity, while the Seebeck coefficients remain consistently high. The calculated band structure shows that Pb doping induces band convergence, thereby increasing the effective mass. Furthermore, the large ionic radius of Pb2+ results in the generation of additional point and plane defects and interphases, dramatically enhancing phonon scattering, which significantly decreases the lattice thermal conductivity at high temperatures. Overall, a maximum figure of merit (zTmax ) ≈ 0.85 at 653 K is obtained in Cu3 Sb0.97 Pb0.03 Se4 . This represents a 1.6-fold increase compared to the undoped sample and exceeds most doped Cu3 SbSe4 -based materials produced by solid-state, demonstrating advantages of versatility and cost-effectiveness using a solution-based technology.
| Medienart: |
E-Artikel |
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| Erscheinungsjahr: |
2023 |
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| Erschienen: |
2023 |
| Enthalten in: |
Zur Gesamtaufnahme - year:2023 |
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| Enthalten in: |
Small methods - (2023) vom: 28. Dez., Seite e2301377 |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Wan, Shanhong [VerfasserIn] |
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| Links: |
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| Themen: |
Band engineering |
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| Anmerkungen: |
Date Revised 28.12.2023 published: Print-Electronic Citation Status Publisher |
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| doi: |
10.1002/smtd.202301377 |
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| funding: |
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| Förderinstitution / Projekttitel: |
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| PPN (Katalog-ID): |
NLM366436376 |
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| 520 | |a © 2023 Wiley-VCH GmbH. | ||
| 520 | |a Developing cost-effective and high-performance thermoelectric (TE) materials to assemble efficient TE devices presents a multitude of challenges and opportunities. Cu3 SbSe4 is a promising p-type TE material based on relatively earth abundant elements. However, the challenge lies in its poor electrical conductivity. Herein, an efficient and scalable solution-based approach is developed to synthesize high-quality Cu3 SbSe4 nanocrystals doped with Pb at the Sb site. After ligand displacement and annealing treatments, the dried powders are consolidated into dense pellets, and their TE properties are investigated. Pb doping effectively increases the charge carrier concentration, resulting in a significant increase in electrical conductivity, while the Seebeck coefficients remain consistently high. The calculated band structure shows that Pb doping induces band convergence, thereby increasing the effective mass. Furthermore, the large ionic radius of Pb2+ results in the generation of additional point and plane defects and interphases, dramatically enhancing phonon scattering, which significantly decreases the lattice thermal conductivity at high temperatures. Overall, a maximum figure of merit (zTmax ) ≈ 0.85 at 653 K is obtained in Cu3 Sb0.97 Pb0.03 Se4 . This represents a 1.6-fold increase compared to the undoped sample and exceeds most doped Cu3 SbSe4 -based materials produced by solid-state, demonstrating advantages of versatility and cost-effectiveness using a solution-based technology | ||
| 650 | 4 | |a Journal Article | |
| 650 | 4 | |a Cu3SbSe4 nanocrystal | |
| 650 | 4 | |a Pb doping | |
| 650 | 4 | |a band engineering | |
| 650 | 4 | |a solution processing | |
| 650 | 4 | |a thermoelectricity | |
| 700 | 1 | |a Xiao, Shanshan |e verfasserin |4 aut | |
| 700 | 1 | |a Li, Mingquan |e verfasserin |4 aut | |
| 700 | 1 | |a Wang, Xin |e verfasserin |4 aut | |
| 700 | 1 | |a Lim, Khak Ho |e verfasserin |4 aut | |
| 700 | 1 | |a Hong, Min |e verfasserin |4 aut | |
| 700 | 1 | |a Ibáñez, Maria |e verfasserin |4 aut | |
| 700 | 1 | |a Cabot, Andreu |e verfasserin |4 aut | |
| 700 | 1 | |a Liu, Yu |e verfasserin |4 aut | |
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