Defect Engineering of 2D Semiconductors for Dual Control of Emission and Carrier Polarity
© 2023 Wiley‐VCH GmbH..
2D transition metal dichalcogenides (TMDCs) are considered as promising materials in post-Moore technology. However, the low photoluminescence quantum yields (PLQY) and single carrier polarity due to the inevitable defects during material preparation are great obstacles to their practical applications. Here, an extraordinary defect engineering strategy is reported based on first-principles calculations and realize it experimentally on WS2 monolayers by doping with IIIA atoms. The doped samples with large sizes possess both giant PLQY enhancement and effective carrier polarity modulation. Surprisingly, the high PL emission maintained even after one year under ambient environment. Moreover, the constructed p-n homojunctions shows high rectification ratio (≈2200), ultrafast response times and excellent stability. Meanwhile, the doping strategy is universally applicable to other TMDCs and dopants. This smart defect engineering strategy not only provides a general scheme to eliminate the negative influence of defects, but also utilize them to achieve desired optoelectronic properties for multifunctional applications.
| Medienart: |
E-Artikel |
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| Erscheinungsjahr: |
2024 |
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| Erschienen: |
2024 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:36 |
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| Enthalten in: |
Advanced materials (Deerfield Beach, Fla.) - 36(2024), 14 vom: 25. Apr., Seite e2312425 |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Chen, Ying [VerfasserIn] |
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| Links: |
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| Themen: |
Carrier polarity modulation |
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| Anmerkungen: |
Date Revised 04.04.2024 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
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| doi: |
10.1002/adma.202312425 |
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| funding: |
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| Förderinstitution / Projekttitel: |
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NLM366373390 |
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| 520 | |a 2D transition metal dichalcogenides (TMDCs) are considered as promising materials in post-Moore technology. However, the low photoluminescence quantum yields (PLQY) and single carrier polarity due to the inevitable defects during material preparation are great obstacles to their practical applications. Here, an extraordinary defect engineering strategy is reported based on first-principles calculations and realize it experimentally on WS2 monolayers by doping with IIIA atoms. The doped samples with large sizes possess both giant PLQY enhancement and effective carrier polarity modulation. Surprisingly, the high PL emission maintained even after one year under ambient environment. Moreover, the constructed p-n homojunctions shows high rectification ratio (≈2200), ultrafast response times and excellent stability. Meanwhile, the doping strategy is universally applicable to other TMDCs and dopants. This smart defect engineering strategy not only provides a general scheme to eliminate the negative influence of defects, but also utilize them to achieve desired optoelectronic properties for multifunctional applications | ||
| 650 | 4 | |a Journal Article | |
| 650 | 4 | |a carrier polarity modulation | |
| 650 | 4 | |a extraordinary stability | |
| 650 | 4 | |a giant emission enhancement | |
| 650 | 4 | |a substitutional doping | |
| 650 | 4 | |a sulfur‐based 2D materials | |
| 700 | 1 | |a Liu, Huawei |e verfasserin |4 aut | |
| 700 | 1 | |a Yu, Guoliang |e verfasserin |4 aut | |
| 700 | 1 | |a Ma, Chao |e verfasserin |4 aut | |
| 700 | 1 | |a Xu, Zheyuan |e verfasserin |4 aut | |
| 700 | 1 | |a Zhang, Jinding |e verfasserin |4 aut | |
| 700 | 1 | |a Zhang, Cheng |e verfasserin |4 aut | |
| 700 | 1 | |a Chen, Mingxing |e verfasserin |4 aut | |
| 700 | 1 | |a Li, Dong |e verfasserin |4 aut | |
| 700 | 1 | |a Zheng, Weihao |e verfasserin |4 aut | |
| 700 | 1 | |a Luo, Ziyu |e verfasserin |4 aut | |
| 700 | 1 | |a Yang, Xin |e verfasserin |4 aut | |
| 700 | 1 | |a Li, Kaihui |e verfasserin |4 aut | |
| 700 | 1 | |a Yao, Chengdong |e verfasserin |4 aut | |
| 700 | 1 | |a Zhang, Danliang |e verfasserin |4 aut | |
| 700 | 1 | |a Xu, Boyi |e verfasserin |4 aut | |
| 700 | 1 | |a Yi, Jiali |e verfasserin |4 aut | |
| 700 | 1 | |a Yi, Chen |e verfasserin |4 aut | |
| 700 | 1 | |a Li, Bo |e verfasserin |4 aut | |
| 700 | 1 | |a Zhang, Hongmei |e verfasserin |4 aut | |
| 700 | 1 | |a Zhang, Zucheng |e verfasserin |4 aut | |
| 700 | 1 | |a Zhu, Xiaoli |e verfasserin |4 aut | |
| 700 | 1 | |a Li, Siyu |e verfasserin |4 aut | |
| 700 | 1 | |a Chen, Shula |e verfasserin |4 aut | |
| 700 | 1 | |a Jiang, Ying |e verfasserin |4 aut | |
| 700 | 1 | |a Pan, Anlian |e verfasserin |4 aut | |
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