Controlling the Charge Density Wave Transition in Single-Layer TiTe2xSe2(1-x) Alloys by Band Gap Engineering
Closing the band gap of a semiconductor into a semimetallic state gives a powerful potential route to tune the electronic energy gains that drive collective phases like charge density waves (CDWs) and excitonic insulator states. We explore this approach for the controversial CDW material monolayer (ML) TiSe2 by engineering its narrow band gap to the semimetallic limit of ML-TiTe2. Using molecular beam epitaxy, we demonstrate the growth of ML-TiTe2xSe2(1-x) alloys across the entire compositional range and unveil how the (2 × 2) CDW instability evolves through the normal state semiconductor-semimetal transition via in situ angle-resolved photoemission spectroscopy. Through model electronic structure calculations, we identify how this tunes the relative strength of excitonic and Peierls-like coupling, demonstrating band gap engineering as a powerful method for controlling the microscopic mechanisms underpinning the formation of collective states in two-dimensional materials.
| Medienart: |
E-Artikel |
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| Erscheinungsjahr: |
2024 |
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| Erschienen: |
2024 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:24 |
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| Enthalten in: |
Nano letters - 24(2024), 1 vom: 10. Jan., Seite 215-221 |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Antonelli, Tommaso [VerfasserIn] |
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| Links: |
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| Themen: |
2D materials |
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| Anmerkungen: |
Date Revised 14.01.2024 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
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| doi: |
10.1021/acs.nanolett.3c03776 |
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| funding: |
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| Förderinstitution / Projekttitel: |
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| PPN (Katalog-ID): |
NLM366083732 |
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| 500 | |a published: Print-Electronic | ||
| 500 | |a Citation Status PubMed-not-MEDLINE | ||
| 520 | |a Closing the band gap of a semiconductor into a semimetallic state gives a powerful potential route to tune the electronic energy gains that drive collective phases like charge density waves (CDWs) and excitonic insulator states. We explore this approach for the controversial CDW material monolayer (ML) TiSe2 by engineering its narrow band gap to the semimetallic limit of ML-TiTe2. Using molecular beam epitaxy, we demonstrate the growth of ML-TiTe2xSe2(1-x) alloys across the entire compositional range and unveil how the (2 × 2) CDW instability evolves through the normal state semiconductor-semimetal transition via in situ angle-resolved photoemission spectroscopy. Through model electronic structure calculations, we identify how this tunes the relative strength of excitonic and Peierls-like coupling, demonstrating band gap engineering as a powerful method for controlling the microscopic mechanisms underpinning the formation of collective states in two-dimensional materials | ||
| 650 | 4 | |a Journal Article | |
| 650 | 4 | |a 2D materials | |
| 650 | 4 | |a angle-resolved photoemission spectroscopy | |
| 650 | 4 | |a charge density wave | |
| 650 | 4 | |a excitonic insulator | |
| 650 | 4 | |a molecular beam epitaxy | |
| 650 | 4 | |a transition-metal dichalcogenide | |
| 700 | 1 | |a Rajan, Akhil |e verfasserin |4 aut | |
| 700 | 1 | |a Watson, Matthew D |e verfasserin |4 aut | |
| 700 | 1 | |a Soltani, Shoresh |e verfasserin |4 aut | |
| 700 | 1 | |a Houghton, Joe |e verfasserin |4 aut | |
| 700 | 1 | |a Siemann, Gesa-Roxanne |e verfasserin |4 aut | |
| 700 | 1 | |a Zivanovic, Andela |e verfasserin |4 aut | |
| 700 | 1 | |a Bigi, Chiara |e verfasserin |4 aut | |
| 700 | 1 | |a Edwards, Brendan |e verfasserin |4 aut | |
| 700 | 1 | |a King, Phil D C |e verfasserin |4 aut | |
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