Determining the Electron Scattering from Interfacial Coulomb Scatterers in Two-Dimensional Transistors
Two-dimensional (2D) transistors are promising for potential applications in next-generation semiconductor chips. Owing to the atomically thin thickness of 2D materials, the carrier scattering from interfacial Coulomb scatterers greatly suppresses the carrier mobility and hampers transistor performance. However, a feasible method to quantitatively determine relevant Coulomb scattering parameters from interfacial long-range scatterers is largely lacking. Here, we demonstrate a method to determine the Coulomb scattering strength and the density of Coulomb scattering centers in InSe transistors by comprehensively analyzing the low-frequency noise and transport characteristics. Moreover, the relative contributions from long-range and short-range scattering in the InSe transistors can be distinguished. This method is employed to make InSe transistors consisting of various interfaces a model system, revealing the profound effects of different scattering sources on transport characteristics and low-frequency noise. Quantitatively accessing the scattering parameters of 2D transistors provides valuable insight into engineering the interfaces of a wide spectrum of ultrathin-body transistors for high-performance electronics.
| Medienart: |
E-Artikel |
|---|
| Erscheinungsjahr: |
2024 |
|---|---|
| Erschienen: |
2024 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:16 |
|---|---|
| Enthalten in: |
ACS applied materials & interfaces - 16(2024), 1 vom: 10. Jan., Seite 1066-1073 |
| Sprache: |
Englisch |
|---|
| Beteiligte Personen: |
Lee, Yi-Te [VerfasserIn] |
|---|
| Links: |
|---|
| Themen: |
2D materials |
|---|
| Anmerkungen: |
Date Revised 11.01.2024 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
|---|
| doi: |
10.1021/acsami.3c14312 |
|---|
| funding: |
|
|---|---|
| Förderinstitution / Projekttitel: |
|
| PPN (Katalog-ID): |
NLM366042033 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | NLM366042033 | ||
| 003 | DE-627 | ||
| 005 | 20240114233851.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 231227s2024 xx |||||o 00| ||eng c | ||
| 024 | 7 | |a 10.1021/acsami.3c14312 |2 doi | |
| 028 | 5 | 2 | |a pubmed24n1256.xml |
| 035 | |a (DE-627)NLM366042033 | ||
| 035 | |a (NLM)38113538 | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 100 | 1 | |a Lee, Yi-Te |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Determining the Electron Scattering from Interfacial Coulomb Scatterers in Two-Dimensional Transistors |
| 264 | 1 | |c 2024 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a ƒaComputermedien |b c |2 rdamedia | ||
| 338 | |a ƒa Online-Ressource |b cr |2 rdacarrier | ||
| 500 | |a Date Revised 11.01.2024 | ||
| 500 | |a published: Print-Electronic | ||
| 500 | |a Citation Status PubMed-not-MEDLINE | ||
| 520 | |a Two-dimensional (2D) transistors are promising for potential applications in next-generation semiconductor chips. Owing to the atomically thin thickness of 2D materials, the carrier scattering from interfacial Coulomb scatterers greatly suppresses the carrier mobility and hampers transistor performance. However, a feasible method to quantitatively determine relevant Coulomb scattering parameters from interfacial long-range scatterers is largely lacking. Here, we demonstrate a method to determine the Coulomb scattering strength and the density of Coulomb scattering centers in InSe transistors by comprehensively analyzing the low-frequency noise and transport characteristics. Moreover, the relative contributions from long-range and short-range scattering in the InSe transistors can be distinguished. This method is employed to make InSe transistors consisting of various interfaces a model system, revealing the profound effects of different scattering sources on transport characteristics and low-frequency noise. Quantitatively accessing the scattering parameters of 2D transistors provides valuable insight into engineering the interfaces of a wide spectrum of ultrathin-body transistors for high-performance electronics | ||
| 650 | 4 | |a Journal Article | |
| 650 | 4 | |a 2D materials | |
| 650 | 4 | |a 2D transistors | |
| 650 | 4 | |a Coulomb scattering strength | |
| 650 | 4 | |a electron scattering | |
| 650 | 4 | |a indium selenide | |
| 650 | 4 | |a interfacial Coulomb scatterers | |
| 650 | 4 | |a low-frequency noise | |
| 700 | 1 | |a Huang, Yu-Ting |e verfasserin |4 aut | |
| 700 | 1 | |a Chiu, Shao-Pin |e verfasserin |4 aut | |
| 700 | 1 | |a Wang, Ruey-Tay |e verfasserin |4 aut | |
| 700 | 1 | |a Taniguchi, Takashi |e verfasserin |4 aut | |
| 700 | 1 | |a Watanabe, Kenji |e verfasserin |4 aut | |
| 700 | 1 | |a Sankar, Raman |e verfasserin |4 aut | |
| 700 | 1 | |a Liang, Chi-Te |e verfasserin |4 aut | |
| 700 | 1 | |a Wang, Wei-Hua |e verfasserin |4 aut | |
| 700 | 1 | |a Yeh, Sheng-Shiuan |e verfasserin |4 aut | |
| 700 | 1 | |a Lin, Juhn-Jong |e verfasserin |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t ACS applied materials & interfaces |d 2009 |g 16(2024), 1 vom: 10. Jan., Seite 1066-1073 |w (DE-627)NLM194100049 |x 1944-8252 |7 nnns |
| 773 | 1 | 8 | |g volume:16 |g year:2024 |g number:1 |g day:10 |g month:01 |g pages:1066-1073 |
| 856 | 4 | 0 | |u http://dx.doi.org/10.1021/acsami.3c14312 |3 Volltext |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a GBV_NLM | ||
| 951 | |a AR | ||
| 952 | |d 16 |j 2024 |e 1 |b 10 |c 01 |h 1066-1073 | ||