Influence of neutron irradiation on the electronic properties of hexagonal boron nitride measured by terahertz time-domain spectroscopy
Due to the low atomic number of B, hexagonal boron nitride (hBN) has a large neutron scattering cross section and, therefore, is an ideal material for the realization of solid-state neutron detector. Here we apply the THz time-domain spectroscopy to study the effect of neutron irradiation on electronic properties of pyrolytic (PBN) and hot-pressed boron nitride (HBN). The key electronic parameters of these samples, such as the static dielectric constant ε b, the effective carrier density N*, the carrier relaxation time τ, and the electronic localization factor α, are determined optically, and their dependences upon the neutron irradiation fluence (NIF) are examined. We find that for hBN,N* and ε b decrease while τ and |α| increase with increasing NIF. These results can be used to further understand the neutron irradiation effects on the basic physical properties of hBN material. We believe that the results obtained from this work can benefit to the design and application of hBN material for neutron detectors.
| Medienart: |
E-Artikel |
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| Erscheinungsjahr: |
2023 |
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| Erschienen: |
2023 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:48 |
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| Enthalten in: |
Optics letters - 48(2023), 24 vom: 15. Dez., Seite 6581-6584 |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Zhang, Jing [VerfasserIn] |
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| Links: |
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| Anmerkungen: |
Date Revised 15.12.2023 published: Print Citation Status PubMed-not-MEDLINE |
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| doi: |
10.1364/OL.507302 |
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| funding: |
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| Förderinstitution / Projekttitel: |
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| PPN (Katalog-ID): |
NLM365904937 |
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| 520 | |a Due to the low atomic number of B, hexagonal boron nitride (hBN) has a large neutron scattering cross section and, therefore, is an ideal material for the realization of solid-state neutron detector. Here we apply the THz time-domain spectroscopy to study the effect of neutron irradiation on electronic properties of pyrolytic (PBN) and hot-pressed boron nitride (HBN). The key electronic parameters of these samples, such as the static dielectric constant ε b, the effective carrier density N*, the carrier relaxation time τ, and the electronic localization factor α, are determined optically, and their dependences upon the neutron irradiation fluence (NIF) are examined. We find that for hBN,N* and ε b decrease while τ and |α| increase with increasing NIF. These results can be used to further understand the neutron irradiation effects on the basic physical properties of hBN material. We believe that the results obtained from this work can benefit to the design and application of hBN material for neutron detectors | ||
| 650 | 4 | |a Journal Article | |
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| 700 | 1 | |a Wen, Hua |e verfasserin |4 aut | |
| 700 | 1 | |a Cheng, Xingjia |e verfasserin |4 aut | |
| 700 | 1 | |a Zhou, Shun |e verfasserin |4 aut | |
| 700 | 1 | |a Li, Haowen |e verfasserin |4 aut | |
| 700 | 1 | |a Wang, Zhu |e verfasserin |4 aut | |
| 700 | 1 | |a He, Gaokui |e verfasserin |4 aut | |
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