VTe2 : Broadband Saturable Absorber for Passively Q-Switched Lasers in the Near- and Mid-Infrared Regions
In this study, we demonstrate the fabrication of a novel 2D transition metal dichalcogenide, VTe2, into a saturable absorber (SA) by using the liquid phase exfoliation method. Furthermore, the first-principles calculations were conducted to elucidate the electronic band structures and absorption spectrum. The nonlinear optical absorption properties of VTe2 at 1.0, 2.0, and 3.0 μm were measured using open-aperture Z-scan and P-scan methods, which showed saturation intensities and modulation depths of 95.57 GW/cm2 and 9.24%, 3.11 GW/cm2 and 7.26%, and 15.8 MW/cm2 and 17.1%, respectively. Furthermore, in the realm of practical implementation, the achievement of stable passively Q-switched (PQS) lasers employing SA composed of few-layered VTe2 nanosheets has manifested itself with broadband operating wavelengths from 1.0 to ∼3.0 μm. Specifically, PQS laser operations from near-infrared to mid-infrared with pulse durations of 195 and 563 ns for 1.0 and 2.0 μm solid-state lasers, respectively, and 749 ns for an Er3+-doped fluoride fiber laser at 3.0 μm were obtained. Our experimental results demonstrate that VTe2 is a potential broadband SA device for achieving PQS lasers. To the best of our knowledge, this is the first demonstration of using VTe2 as an SA in PQS lasers in the near- and mid-infrared regions, which highlights the potential of VTe2 for future research and applications in optoelectronic devices.
| Medienart: |
E-Artikel |
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| Erscheinungsjahr: |
2023 |
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| Erschienen: |
2023 |
| Enthalten in: |
Zur Gesamtaufnahme - year:2023 |
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| Enthalten in: |
ACS applied materials & interfaces - (2023) vom: 01. Dez. |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Zhang, Wenyao [VerfasserIn] |
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| Links: |
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| Themen: |
2D transition metal dichalcogenides |
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| Anmerkungen: |
Date Revised 01.12.2023 published: Print-Electronic Citation Status Publisher |
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| doi: |
10.1021/acsami.3c10790 |
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| funding: |
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| Förderinstitution / Projekttitel: |
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| PPN (Katalog-ID): |
NLM365293857 |
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| 520 | |a In this study, we demonstrate the fabrication of a novel 2D transition metal dichalcogenide, VTe2, into a saturable absorber (SA) by using the liquid phase exfoliation method. Furthermore, the first-principles calculations were conducted to elucidate the electronic band structures and absorption spectrum. The nonlinear optical absorption properties of VTe2 at 1.0, 2.0, and 3.0 μm were measured using open-aperture Z-scan and P-scan methods, which showed saturation intensities and modulation depths of 95.57 GW/cm2 and 9.24%, 3.11 GW/cm2 and 7.26%, and 15.8 MW/cm2 and 17.1%, respectively. Furthermore, in the realm of practical implementation, the achievement of stable passively Q-switched (PQS) lasers employing SA composed of few-layered VTe2 nanosheets has manifested itself with broadband operating wavelengths from 1.0 to ∼3.0 μm. Specifically, PQS laser operations from near-infrared to mid-infrared with pulse durations of 195 and 563 ns for 1.0 and 2.0 μm solid-state lasers, respectively, and 749 ns for an Er3+-doped fluoride fiber laser at 3.0 μm were obtained. Our experimental results demonstrate that VTe2 is a potential broadband SA device for achieving PQS lasers. To the best of our knowledge, this is the first demonstration of using VTe2 as an SA in PQS lasers in the near- and mid-infrared regions, which highlights the potential of VTe2 for future research and applications in optoelectronic devices | ||
| 650 | 4 | |a Journal Article | |
| 650 | 4 | |a 2D transition metal dichalcogenides | |
| 650 | 4 | |a Z-scan method | |
| 650 | 4 | |a broadband saturable absorber | |
| 650 | 4 | |a liquid-phase exfoliation | |
| 650 | 4 | |a passively Q-switched | |
| 700 | 1 | |a Liang, Yuxian |e verfasserin |4 aut | |
| 700 | 1 | |a Gan, Yiyu |e verfasserin |4 aut | |
| 700 | 1 | |a Huang, Hongfu |e verfasserin |4 aut | |
| 700 | 1 | |a Liang, Guowen |e verfasserin |4 aut | |
| 700 | 1 | |a Kang, Qi |e verfasserin |4 aut | |
| 700 | 1 | |a Leng, Xudong |e verfasserin |4 aut | |
| 700 | 1 | |a Jing, Qun |e verfasserin |4 aut | |
| 700 | 1 | |a Wen, Qiao |e verfasserin |4 aut | |
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