Exceptional Hole-Selective Properties of Ta2O5 Films via Sn4+ Doping for High Performance Silicon Heterojunction Solar Cells
© 2023 Wiley‐VCH GmbH..
Carrier-selective passivating contacts using transition metal oxides (TMOs) have attracted great attention for crystalline silicon (c-Si) heterojunction solar cells recently. Among them, tantalum oxide (Ta2O5) exhibits outstanding advantages, such as a wide bandgap, good surface passivation, and a small conduction band offset with c-Si, which is typically used as an electron-selective contact layer. Interestingly, it is first demonstrated that solution-processed Ta2O5 films exhibit a high hole selectivity, which blocks electrons and promotes hole transport simultaneously. Through the ozone pre-treatment of Ta2O5/p-Si interface and optimization of the film thickness (≈9 nm), the interfacial recombination is suppressed and the contact resistivity is reduced from 178.0 to 29.3 mΩ cm2. Moreover, the Sn4+ doping increases both the work function and oxygen vacancies of the film, contributing to the improved hole-selective contact performance. As a result, the photoelectric conversion efficiencies of Ta2O5/p-Si heterojunction solar cells are significantly improved from 14.84% to 18.47%, with a high thermal stability up to 300 °C. The work has provided a feasible strategy to explore new features of TMOs for carrier-selective contact applications, that is, bipolar carrier transport properties.
| Medienart: |
E-Artikel |
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| Erscheinungsjahr: |
2024 |
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| Erschienen: |
2024 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:20 |
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| Enthalten in: |
Small (Weinheim an der Bergstrasse, Germany) - 20(2024), 14 vom: 04. Apr., Seite e2306666 |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Liu, Wuqi [VerfasserIn] |
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| Links: |
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| Themen: |
Doping |
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| Anmerkungen: |
Date Revised 04.04.2024 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
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| doi: |
10.1002/smll.202306666 |
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| funding: |
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| Förderinstitution / Projekttitel: |
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NLM364816805 |
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| 520 | |a Carrier-selective passivating contacts using transition metal oxides (TMOs) have attracted great attention for crystalline silicon (c-Si) heterojunction solar cells recently. Among them, tantalum oxide (Ta2O5) exhibits outstanding advantages, such as a wide bandgap, good surface passivation, and a small conduction band offset with c-Si, which is typically used as an electron-selective contact layer. Interestingly, it is first demonstrated that solution-processed Ta2O5 films exhibit a high hole selectivity, which blocks electrons and promotes hole transport simultaneously. Through the ozone pre-treatment of Ta2O5/p-Si interface and optimization of the film thickness (≈9 nm), the interfacial recombination is suppressed and the contact resistivity is reduced from 178.0 to 29.3 mΩ cm2. Moreover, the Sn4+ doping increases both the work function and oxygen vacancies of the film, contributing to the improved hole-selective contact performance. As a result, the photoelectric conversion efficiencies of Ta2O5/p-Si heterojunction solar cells are significantly improved from 14.84% to 18.47%, with a high thermal stability up to 300 °C. The work has provided a feasible strategy to explore new features of TMOs for carrier-selective contact applications, that is, bipolar carrier transport properties | ||
| 650 | 4 | |a Journal Article | |
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| 650 | 4 | |a oxygen vacancies | |
| 650 | 4 | |a silicon solar cells | |
| 650 | 4 | |a tantalum oxide | |
| 700 | 1 | |a Fu, Wang |e verfasserin |4 aut | |
| 700 | 1 | |a Wei, Yaju |e verfasserin |4 aut | |
| 700 | 1 | |a Yu, Guoqiang |e verfasserin |4 aut | |
| 700 | 1 | |a Wang, Tao |e verfasserin |4 aut | |
| 700 | 1 | |a Xu, Lingbo |e verfasserin |4 aut | |
| 700 | 1 | |a Wu, Xiaoping |e verfasserin |4 aut | |
| 700 | 1 | |a Lin, Ping |e verfasserin |4 aut | |
| 700 | 1 | |a Yu, Xuegong |e verfasserin |4 aut | |
| 700 | 1 | |a Cui, Can |e verfasserin |4 aut | |
| 700 | 1 | |a Wang, Peng |e verfasserin |4 aut | |
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