Self-Assembled Au Nanoelectrodes : Enabling Low-Threshold-Voltage HfO2-Based Artificial Neurons
Filamentary-type resistive switching devices, such as conductive bridge random-access memory and valence change memory, have diverse applications in memory and neuromorphic computing. However, the randomness in filament formation poses challenges to device reliability and uniformity. To overcome this issue, various defect engineering methods have been explored, including doping, metal nanoparticle embedding, and extended defect utilization. In this study, we present a simple and effective approach using self-assembled uniform Au nanoelectrodes to controll filament formation in HfO2 resistive switching devices. By concentrating the electric field near the Au nanoelectrodes within the BaTiO3 matrix, we significantly enhanced the device stability and reduced the threshold voltage by up to 45% in HfO2-based artificial neurons compared to the control devices. The threshold voltage reduction is attributed to the uniformly distributed Au nanoelectrodes in the insulating matrix, as confirmed by COMSOL simulation. Our findings highlight the potential of nanostructure design for precise control of filamentary-type resistive switching devices.
| Medienart: |
E-Artikel |
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| Erscheinungsjahr: |
2023 |
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| Erschienen: |
2023 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:23 |
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| Enthalten in: |
Nano letters - 23(2023), 21 vom: 08. Nov., Seite 9711-9718 |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Dou, Hongyi [VerfasserIn] |
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| Links: |
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| Themen: |
Artificial neuron |
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| Anmerkungen: |
Date Revised 13.11.2023 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
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| doi: |
10.1021/acs.nanolett.3c02217 |
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| funding: |
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| Förderinstitution / Projekttitel: |
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| PPN (Katalog-ID): |
NLM363675221 |
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| 500 | |a Citation Status PubMed-not-MEDLINE | ||
| 520 | |a Filamentary-type resistive switching devices, such as conductive bridge random-access memory and valence change memory, have diverse applications in memory and neuromorphic computing. However, the randomness in filament formation poses challenges to device reliability and uniformity. To overcome this issue, various defect engineering methods have been explored, including doping, metal nanoparticle embedding, and extended defect utilization. In this study, we present a simple and effective approach using self-assembled uniform Au nanoelectrodes to controll filament formation in HfO2 resistive switching devices. By concentrating the electric field near the Au nanoelectrodes within the BaTiO3 matrix, we significantly enhanced the device stability and reduced the threshold voltage by up to 45% in HfO2-based artificial neurons compared to the control devices. The threshold voltage reduction is attributed to the uniformly distributed Au nanoelectrodes in the insulating matrix, as confirmed by COMSOL simulation. Our findings highlight the potential of nanostructure design for precise control of filamentary-type resistive switching devices | ||
| 650 | 4 | |a Journal Article | |
| 650 | 4 | |a HfO2 | |
| 650 | 4 | |a artificial neuron | |
| 650 | 4 | |a defect engineering | |
| 650 | 4 | |a threshold switching | |
| 650 | 4 | |a vertically aligned nanocomposite | |
| 700 | 1 | |a Lin, Zehao |e verfasserin |4 aut | |
| 700 | 1 | |a Hu, Zedong |e verfasserin |4 aut | |
| 700 | 1 | |a Tsai, Benson Kunhung |e verfasserin |4 aut | |
| 700 | 1 | |a Zheng, Dongqi |e verfasserin |4 aut | |
| 700 | 1 | |a Song, Jiawei |e verfasserin |4 aut | |
| 700 | 1 | |a Lu, Juanjuan |e verfasserin |4 aut | |
| 700 | 1 | |a Zhang, Xinghang |e verfasserin |4 aut | |
| 700 | 1 | |a Jia, Quanxi |e verfasserin |4 aut | |
| 700 | 1 | |a MacManus-Driscoll, Judith L |e verfasserin |4 aut | |
| 700 | 1 | |a Ye, Peide D |e verfasserin |4 aut | |
| 700 | 1 | |a Wang, Haiyan |e verfasserin |4 aut | |
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