Imaging Extreme Ultraviolet Radiation Using Nanodiamonds with Nitrogen-Vacancy Centers
Extreme ultraviolet (EUV) radiation with wavelengths of 10-121 nm has drawn considerable attention recently for its use in photolithography to fabricate nanoelectronic chips. This study demonstrates, for the first time, fluorescent nanodiamonds (FNDs) with nitrogen-vacancy (NV) centers as scintillators to image and characterize EUV radiations. The FNDs employed are ∼100 nm in size; they form a uniform and stable thin film on an indium-tin-oxide-coated slide by electrospray deposition. The film is nonhygroscopic and photostable and can emit bright red fluorescence from NV0 centers when excited by EUV light. An FND-based imaging device has been developed and applied for beam diagnostics of 50 nm and 13.5 nm synchrotron radiations, achieving a spatial resolution of 30 μm using a film of ∼1 μm thickness. The noise equivalent power density is 29 μW/(cm2 Hz1/2) for the 13.5 nm radiation. The method is generally applicable to imaging EUV radiation from different sources.
Medienart: |
E-Artikel |
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Erscheinungsjahr: |
2023 |
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Erschienen: |
2023 |
Enthalten in: |
Zur Gesamtaufnahme - volume:23 |
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Enthalten in: |
Nano letters - 23(2023), 21 vom: 08. Nov., Seite 9811-9816 |
Sprache: |
Englisch |
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Beteiligte Personen: |
Yang, Teng-I [VerfasserIn] |
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Links: |
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Themen: |
Above-bandgap excitation |
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Anmerkungen: |
Date Revised 08.11.2023 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
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doi: |
10.1021/acs.nanolett.3c02472 |
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funding: |
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Förderinstitution / Projekttitel: |
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PPN (Katalog-ID): |
NLM362057249 |
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520 | |a Extreme ultraviolet (EUV) radiation with wavelengths of 10-121 nm has drawn considerable attention recently for its use in photolithography to fabricate nanoelectronic chips. This study demonstrates, for the first time, fluorescent nanodiamonds (FNDs) with nitrogen-vacancy (NV) centers as scintillators to image and characterize EUV radiations. The FNDs employed are ∼100 nm in size; they form a uniform and stable thin film on an indium-tin-oxide-coated slide by electrospray deposition. The film is nonhygroscopic and photostable and can emit bright red fluorescence from NV0 centers when excited by EUV light. An FND-based imaging device has been developed and applied for beam diagnostics of 50 nm and 13.5 nm synchrotron radiations, achieving a spatial resolution of 30 μm using a film of ∼1 μm thickness. The noise equivalent power density is 29 μW/(cm2 Hz1/2) for the 13.5 nm radiation. The method is generally applicable to imaging EUV radiation from different sources | ||
650 | 4 | |a Journal Article | |
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650 | 4 | |a extreme ultraviolet radiation | |
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700 | 1 | |a Huang, Yu-Wen |e verfasserin |4 aut | |
700 | 1 | |a Lee, Yin-Yu |e verfasserin |4 aut | |
700 | 1 | |a Cheng, Bing-Ming |e verfasserin |4 aut | |
700 | 1 | |a Chang, Huan-Cheng |e verfasserin |4 aut | |
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