Breaking the Trade-Off Between Polymer Dielectric Constant and Loss via Aluminum Oxo Macrocycle Dopants for High-Performance Neuromorphic Electronics
© 2023 Wiley-VCH GmbH..
The dielectric layer is crucial in regulating the overall performance of field-effect transistors (FETs), the key component in central processing units, sensors, and displays. Despite considerable efforts being devoted to developing high-permittivity (k) dielectrics, limited progress is made due to the inherent trade-off between dielectric constant and loss. Here, a solution is presented by designing a monodispersed disk-shaped Ce-Al-O-macrocycle as a dopant in polymer dielectrics. The molecule features a central Ce(III) core connected with eight Al atoms through sixteen bridging hydroxyls and eight 3-aminophenyl peripheries. The incorporation of this macrocycle in polymer dielectrics results in an up to sevenfold increase in dielectric constants and up to 89% reduction in dielectric loss at low frequencies. Moreover, the leakage-current densities decrease, and the breakdown strengths are improved by 63%. Relying on the above merits, FETs bearing cluster-doped polymer dielectrics give near three-orders source-drain current increments while maintaining low-level leakage/off currents, resulting in much higher charge-carrier mobilities (up to 2.45 cm2 V-1 s-1 ) and on/off ratios. This cluster-doping strategy is generalizable and shows great promise for ultralow-power photoelectric synapses and neuromorphic retinas. This work successfully breaks the trade-off between dielectric constant and loss and offers a unique design for polymer composite dielectrics.
| Medienart: |
E-Artikel |
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| Erscheinungsjahr: |
2023 |
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| Erschienen: |
2023 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:35 |
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| Enthalten in: |
Advanced materials (Deerfield Beach, Fla.) - 35(2023), 49 vom: 02. Dez., Seite e2306260 |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Chen, Xiaowei [VerfasserIn] |
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| Links: |
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| Themen: |
Aluminum oxo macrocycles |
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| Anmerkungen: |
Date Revised 08.12.2023 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
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| doi: |
10.1002/adma.202306260 |
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| funding: |
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| Förderinstitution / Projekttitel: |
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| 520 | |a The dielectric layer is crucial in regulating the overall performance of field-effect transistors (FETs), the key component in central processing units, sensors, and displays. Despite considerable efforts being devoted to developing high-permittivity (k) dielectrics, limited progress is made due to the inherent trade-off between dielectric constant and loss. Here, a solution is presented by designing a monodispersed disk-shaped Ce-Al-O-macrocycle as a dopant in polymer dielectrics. The molecule features a central Ce(III) core connected with eight Al atoms through sixteen bridging hydroxyls and eight 3-aminophenyl peripheries. The incorporation of this macrocycle in polymer dielectrics results in an up to sevenfold increase in dielectric constants and up to 89% reduction in dielectric loss at low frequencies. Moreover, the leakage-current densities decrease, and the breakdown strengths are improved by 63%. Relying on the above merits, FETs bearing cluster-doped polymer dielectrics give near three-orders source-drain current increments while maintaining low-level leakage/off currents, resulting in much higher charge-carrier mobilities (up to 2.45 cm2 V-1 s-1 ) and on/off ratios. This cluster-doping strategy is generalizable and shows great promise for ultralow-power photoelectric synapses and neuromorphic retinas. This work successfully breaks the trade-off between dielectric constant and loss and offers a unique design for polymer composite dielectrics | ||
| 650 | 4 | |a Journal Article | |
| 650 | 4 | |a aluminum oxo macrocycles | |
| 650 | 4 | |a neuromorphic retinas | |
| 650 | 4 | |a polymer dielectrics | |
| 650 | 4 | |a trade-off between dielectric constant and loss | |
| 650 | 4 | |a ultralow-power photoelectric synapses | |
| 700 | 1 | |a Sun, Yi-Fan |e verfasserin |4 aut | |
| 700 | 1 | |a Wu, Xiaosong |e verfasserin |4 aut | |
| 700 | 1 | |a Shi, Shuhui |e verfasserin |4 aut | |
| 700 | 1 | |a Wang, Zhongrui |e verfasserin |4 aut | |
| 700 | 1 | |a Zhang, Jian |e verfasserin |4 aut | |
| 700 | 1 | |a Fang, Wei-Hui |e verfasserin |4 aut | |
| 700 | 1 | |a Huang, Weiguo |e verfasserin |4 aut | |
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