Mechanistic understanding of the interfacial properties of metal-PtSe2 contacts
With the advantages of a moderate band gap, high carrier mobility and good environmental stability, two-dimensional (2D) semiconductors show promising applications in next-generation electronics. However, the accustomed metal-2D semiconductor contact may lead to a strong Fermi level pinning (FLP) effect, which severely limits the practical performance of 2D electronics. Herein, the interfacial properties of the contacts between a promising 2D semiconductor, PtSe2, and a sequence of metal electrodes are systematically investigated. The strong interfacial interactions formed in all metal-PtSe2 contacts lead to chemical bonds and a significant interfacial dipole, resulting in a vertical Schottky barrier for Ag, Au, Pd and Pt-based systems and a lateral Schottky barrier for Al, Cu, Sc and Ti-based systems, with a strong FLP effect. Remarkably, the tunneling probability for most metal-PtSe2 is significantly high and the tunneling-specific resistivity is two orders of magnitude lower than that of the state-of-the-art contacts, demonstrating the high efficiency for electron injection from metals to PtSe2. Moreover, the introduction of h-BN as a buffer layer leads to a weakened FLP effect (S = 0.50) and the transformation into p-type Schottky contact for Pt-PtSe2 contacts. These results reveal the underlying mechanism of the interfacial properties of metal-PtSe2 contacts, which is useful for designing advanced 2D semiconductor-based electronics.
| Medienart: |
E-Artikel |
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| Erscheinungsjahr: |
2023 |
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| Erschienen: |
2023 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:15 |
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| Enthalten in: |
Nanoscale - 15(2023), 32 vom: 17. Aug., Seite 13252-13261 |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Qi, Liujian [VerfasserIn] |
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| Links: |
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| Anmerkungen: |
Date Revised 27.11.2023 published: Electronic Citation Status PubMed-not-MEDLINE |
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| doi: |
10.1039/d3nr02466k |
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| funding: |
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| Förderinstitution / Projekttitel: |
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| PPN (Katalog-ID): |
NLM360481132 |
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| LEADER | 01000naa a22002652 4500 | ||
|---|---|---|---|
| 001 | NLM360481132 | ||
| 003 | DE-627 | ||
| 005 | 20231226083114.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 231226s2023 xx |||||o 00| ||eng c | ||
| 024 | 7 | |a 10.1039/d3nr02466k |2 doi | |
| 028 | 5 | 2 | |a pubmed24n1201.xml |
| 035 | |a (DE-627)NLM360481132 | ||
| 035 | |a (NLM)37548442 | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 100 | 1 | |a Qi, Liujian |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Mechanistic understanding of the interfacial properties of metal-PtSe2 contacts |
| 264 | 1 | |c 2023 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a ƒaComputermedien |b c |2 rdamedia | ||
| 338 | |a ƒa Online-Ressource |b cr |2 rdacarrier | ||
| 500 | |a Date Revised 27.11.2023 | ||
| 500 | |a published: Electronic | ||
| 500 | |a Citation Status PubMed-not-MEDLINE | ||
| 520 | |a With the advantages of a moderate band gap, high carrier mobility and good environmental stability, two-dimensional (2D) semiconductors show promising applications in next-generation electronics. However, the accustomed metal-2D semiconductor contact may lead to a strong Fermi level pinning (FLP) effect, which severely limits the practical performance of 2D electronics. Herein, the interfacial properties of the contacts between a promising 2D semiconductor, PtSe2, and a sequence of metal electrodes are systematically investigated. The strong interfacial interactions formed in all metal-PtSe2 contacts lead to chemical bonds and a significant interfacial dipole, resulting in a vertical Schottky barrier for Ag, Au, Pd and Pt-based systems and a lateral Schottky barrier for Al, Cu, Sc and Ti-based systems, with a strong FLP effect. Remarkably, the tunneling probability for most metal-PtSe2 is significantly high and the tunneling-specific resistivity is two orders of magnitude lower than that of the state-of-the-art contacts, demonstrating the high efficiency for electron injection from metals to PtSe2. Moreover, the introduction of h-BN as a buffer layer leads to a weakened FLP effect (S = 0.50) and the transformation into p-type Schottky contact for Pt-PtSe2 contacts. These results reveal the underlying mechanism of the interfacial properties of metal-PtSe2 contacts, which is useful for designing advanced 2D semiconductor-based electronics | ||
| 650 | 4 | |a Journal Article | |
| 700 | 1 | |a Che, Mengqi |e verfasserin |4 aut | |
| 700 | 1 | |a Liu, Mingxiu |e verfasserin |4 aut | |
| 700 | 1 | |a Wang, Bin |e verfasserin |4 aut | |
| 700 | 1 | |a Zhang, Nan |e verfasserin |4 aut | |
| 700 | 1 | |a Zou, Yuting |e verfasserin |4 aut | |
| 700 | 1 | |a Sun, Xiaojuan |e verfasserin |4 aut | |
| 700 | 1 | |a Shi, Zhiming |e verfasserin |4 aut | |
| 700 | 1 | |a Li, Dabing |e verfasserin |4 aut | |
| 700 | 1 | |a Li, Shaojuan |e verfasserin |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Nanoscale |d 2009 |g 15(2023), 32 vom: 17. Aug., Seite 13252-13261 |w (DE-627)NLM199703388 |x 2040-3372 |7 nnns |
| 773 | 1 | 8 | |g volume:15 |g year:2023 |g number:32 |g day:17 |g month:08 |g pages:13252-13261 |
| 856 | 4 | 0 | |u http://dx.doi.org/10.1039/d3nr02466k |3 Volltext |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a GBV_NLM | ||
| 951 | |a AR | ||
| 952 | |d 15 |j 2023 |e 32 |b 17 |c 08 |h 13252-13261 | ||