Ultrathin Crystalline Silicon Nano and Micro Membranes with High Areal Density for Low-Cost Flexible Electronics
© 2023 Wiley-VCH GmbH..
Ultrathin crystalline silicon is widely used as an active material for high-performance, flexible, and stretchable electronics, from simple passive and active components to complex integrated circuits, due to its excellent electrical and mechanical properties. However, in contrast to conventional silicon wafer-based devices, ultrathin crystalline silicon-based electronics require an expensive and rather complicated fabrication process. Although silicon-on-insulator (SOI) wafers are commonly used to obtain a single layer of crystalline silicon, they are costly and difficult to process. Therefore, as an alternative to SOI wafers-based thin layers, here, a simple transfer method is proposed for printing ultrathin multiple crystalline silicon sheets with thicknesses between 300 nm to 13 µm and high areal density (>90%) from a single mother wafer. Theoretically, the silicon nano/micro membrane can be generated until the mother wafer is completely consumed. In addition, the electronic applications of silicon membranes are successfully demonstrated through the fabrication of a flexible solar cell and flexible NMOS transistor arrays.
Medienart: |
E-Artikel |
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Erscheinungsjahr: |
2023 |
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Erschienen: |
2023 |
Enthalten in: |
Zur Gesamtaufnahme - volume:19 |
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Enthalten in: |
Small (Weinheim an der Bergstrasse, Germany) - 19(2023), 39 vom: 28. Sept., Seite e2302597 |
Sprache: |
Englisch |
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Beteiligte Personen: |
Lee, Ju Young [VerfasserIn] |
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Links: |
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Themen: |
Flexible electronics |
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Anmerkungen: |
Date Revised 20.10.2023 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
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doi: |
10.1002/smll.202302597 |
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funding: |
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Förderinstitution / Projekttitel: |
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PPN (Katalog-ID): |
NLM357484584 |
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520 | |a Ultrathin crystalline silicon is widely used as an active material for high-performance, flexible, and stretchable electronics, from simple passive and active components to complex integrated circuits, due to its excellent electrical and mechanical properties. However, in contrast to conventional silicon wafer-based devices, ultrathin crystalline silicon-based electronics require an expensive and rather complicated fabrication process. Although silicon-on-insulator (SOI) wafers are commonly used to obtain a single layer of crystalline silicon, they are costly and difficult to process. Therefore, as an alternative to SOI wafers-based thin layers, here, a simple transfer method is proposed for printing ultrathin multiple crystalline silicon sheets with thicknesses between 300 nm to 13 µm and high areal density (>90%) from a single mother wafer. Theoretically, the silicon nano/micro membrane can be generated until the mother wafer is completely consumed. In addition, the electronic applications of silicon membranes are successfully demonstrated through the fabrication of a flexible solar cell and flexible NMOS transistor arrays | ||
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700 | 1 | |a Shin, Jongwoon |e verfasserin |4 aut | |
700 | 1 | |a Kim, Kyubeen |e verfasserin |4 aut | |
700 | 1 | |a Ju, Jeong Eun |e verfasserin |4 aut | |
700 | 1 | |a Dutta, Ankan |e verfasserin |4 aut | |
700 | 1 | |a Kim, Tae Soo |e verfasserin |4 aut | |
700 | 1 | |a Cho, Young Uk |e verfasserin |4 aut | |
700 | 1 | |a Kim, Taemin |e verfasserin |4 aut | |
700 | 1 | |a Hu, Luhing |e verfasserin |4 aut | |
700 | 1 | |a Min, Won Kyung |e verfasserin |4 aut | |
700 | 1 | |a Jung, Hyun-Suh |e verfasserin |4 aut | |
700 | 1 | |a Park, Young Sun |e verfasserin |4 aut | |
700 | 1 | |a Won, Sang Min |e verfasserin |4 aut | |
700 | 1 | |a Yeo, Woon-Hong |e verfasserin |4 aut | |
700 | 1 | |a Moon, Jooho |e verfasserin |4 aut | |
700 | 1 | |a Khang, Dahl-Young |e verfasserin |4 aut | |
700 | 1 | |a Kim, Hyun Jae |e verfasserin |4 aut | |
700 | 1 | |a Ahn, Jong-Hyun |e verfasserin |4 aut | |
700 | 1 | |a Cheng, Huanyu |e verfasserin |4 aut | |
700 | 1 | |a Yu, Ki Jun |e verfasserin |4 aut | |
700 | 1 | |a Rogers, John A |e verfasserin |4 aut | |
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