Low-loss silicon nitride photonic ICs for near-infrared wavelength bandwidth
Low-loss photonic integrated circuits (PICs) are the key elements in future quantum technologies, nonlinear photonics and neural networks. The low-loss photonic circuits technology targeting C-band application is well established across multi-project wafer (MPW) fabs, whereas near-infrared (NIR) PICs suitable for the state-of-the-art single-photon sources are still underdeveloped. Here, we report the labs-scale process optimization and optical characterization of low-loss tunable photonic integrated circuits for single-photon applications. We demonstrate the lowest propagation losses to the date (as low as 0.55 dB/cm at 925 nm wavelength) in single-mode silicon nitride submicron waveguides (220×550 nm). This performance is achieved due to advanced e-beam lithography and inductively coupled plasma reactive ion etching steps which yields waveguides vertical sidewalls with down to 0.85 nm sidewall roughness. These results provide a chip-scale low-loss PIC platform that could be even further improved with high quality SiO2 cladding, chemical-mechanical polishing and multistep annealing for extra-strict single-photon applications.
Medienart: |
E-Artikel |
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Erscheinungsjahr: |
2023 |
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Erschienen: |
2023 |
Enthalten in: |
Zur Gesamtaufnahme - volume:31 |
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Enthalten in: |
Optics express - 31(2023), 10 vom: 08. Mai, Seite 16227-16242 |
Sprache: |
Englisch |
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Beteiligte Personen: |
Buzaverov, Kirill A [VerfasserIn] |
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Links: |
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Themen: |
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Anmerkungen: |
Date Completed 09.05.2023 Date Revised 09.05.2023 published: Print Citation Status PubMed-not-MEDLINE |
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doi: |
10.1364/OE.477458 |
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funding: |
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Förderinstitution / Projekttitel: |
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PPN (Katalog-ID): |
NLM356608301 |
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LEADER | 01000naa a22002652 4500 | ||
---|---|---|---|
001 | NLM356608301 | ||
003 | DE-627 | ||
005 | 20231226070825.0 | ||
007 | cr uuu---uuuuu | ||
008 | 231226s2023 xx |||||o 00| ||eng c | ||
024 | 7 | |a 10.1364/OE.477458 |2 doi | |
028 | 5 | 2 | |a pubmed24n1188.xml |
035 | |a (DE-627)NLM356608301 | ||
035 | |a (NLM)37157706 | ||
040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
041 | |a eng | ||
100 | 1 | |a Buzaverov, Kirill A |e verfasserin |4 aut | |
245 | 1 | 0 | |a Low-loss silicon nitride photonic ICs for near-infrared wavelength bandwidth |
264 | 1 | |c 2023 | |
336 | |a Text |b txt |2 rdacontent | ||
337 | |a ƒaComputermedien |b c |2 rdamedia | ||
338 | |a ƒa Online-Ressource |b cr |2 rdacarrier | ||
500 | |a Date Completed 09.05.2023 | ||
500 | |a Date Revised 09.05.2023 | ||
500 | |a published: Print | ||
500 | |a Citation Status PubMed-not-MEDLINE | ||
520 | |a Low-loss photonic integrated circuits (PICs) are the key elements in future quantum technologies, nonlinear photonics and neural networks. The low-loss photonic circuits technology targeting C-band application is well established across multi-project wafer (MPW) fabs, whereas near-infrared (NIR) PICs suitable for the state-of-the-art single-photon sources are still underdeveloped. Here, we report the labs-scale process optimization and optical characterization of low-loss tunable photonic integrated circuits for single-photon applications. We demonstrate the lowest propagation losses to the date (as low as 0.55 dB/cm at 925 nm wavelength) in single-mode silicon nitride submicron waveguides (220×550 nm). This performance is achieved due to advanced e-beam lithography and inductively coupled plasma reactive ion etching steps which yields waveguides vertical sidewalls with down to 0.85 nm sidewall roughness. These results provide a chip-scale low-loss PIC platform that could be even further improved with high quality SiO2 cladding, chemical-mechanical polishing and multistep annealing for extra-strict single-photon applications | ||
650 | 4 | |a Journal Article | |
700 | 1 | |a Baburin, Aleksandr S |e verfasserin |4 aut | |
700 | 1 | |a Sergeev, Evgeny V |e verfasserin |4 aut | |
700 | 1 | |a Avdeev, Sergey S |e verfasserin |4 aut | |
700 | 1 | |a Lotkov, Evgeniy S |e verfasserin |4 aut | |
700 | 1 | |a Andronik, Mihail |e verfasserin |4 aut | |
700 | 1 | |a Stukalova, Victoria E |e verfasserin |4 aut | |
700 | 1 | |a Baklykov, Dmitry A |e verfasserin |4 aut | |
700 | 1 | |a Dyakonov, Ivan V |e verfasserin |4 aut | |
700 | 1 | |a Skryabin, Nikolay N |e verfasserin |4 aut | |
700 | 1 | |a Saygin, Mikhail Yu |e verfasserin |4 aut | |
700 | 1 | |a Kulik, Sergey P |e verfasserin |4 aut | |
700 | 1 | |a Ryzhikov, Ilya A |e verfasserin |4 aut | |
700 | 1 | |a Rodionov, Ilya A |e verfasserin |4 aut | |
773 | 0 | 8 | |i Enthalten in |t Optics express |d 1997 |g 31(2023), 10 vom: 08. Mai, Seite 16227-16242 |w (DE-627)NLM120955946 |x 1094-4087 |7 nnns |
773 | 1 | 8 | |g volume:31 |g year:2023 |g number:10 |g day:08 |g month:05 |g pages:16227-16242 |
856 | 4 | 0 | |u http://dx.doi.org/10.1364/OE.477458 |3 Volltext |
912 | |a GBV_USEFLAG_A | ||
912 | |a GBV_NLM | ||
951 | |a AR | ||
952 | |d 31 |j 2023 |e 10 |b 08 |c 05 |h 16227-16242 |