Type-II Bi2O2Se/MoTe2 van der Waals Heterostructure Photodetectors with High Gate-Modulation Photovoltaic Performance
In recent years, two-dimensional (2D) nonlayered Bi2O2Se-based electronics and optoelectronics have drawn enormous attention owing to their high electron mobility, facile synthetic process, stability to the atmosphere, and moderate narrow band gaps. However, 2D Bi2O2Se-based photodetectors typically present large dark current, relatively slow response speed, and persistent photoconductivity effect, limiting further improvement in fast-response imaging sensors and low-consumption broadband detection. Herein, a Bi2O2Se/2H-MoTe2 van der Waals (vdWs) heterostructure obtained from the chemical vapor deposition (CVD) approach and vertical stacking is reported. The proposed type-II staggered band alignment desirable for suppression of dark current and separation of photoinduced carriers is confirmed by density functional theory (DFT) calculations, accompanied by strong interlayer coupling and efficient built-in potential at the junction. Consequently, a stable visible (405 nm) to near-infrared (1310 nm) response capability, a self-driven prominent responsivity (R) of 1.24 A·W-1, and a high specific detectivity (D*) of 3.73 × 1011 Jones under 405 nm are achieved. In particular, R, D*, fill factor, and photoelectrical conversion efficiency (PCE) can be enhanced to 4.96 A·W-1, 3.84 × 1012 Jones, 0.52, and 7.21% at Vg = -60 V through a large band offset originated from the n+-p junction. It is suggested that the present vdWs heterostructure is a promising candidate for logical integrated circuits, image sensors, and low-power consumption detection.
| Medienart: |
E-Artikel |
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| Erscheinungsjahr: |
2023 |
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| Erschienen: |
2023 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:15 |
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| Enthalten in: |
ACS applied materials & interfaces - 15(2023), 14 vom: 12. Apr., Seite 18101-18113 |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Dan, Zhiying [VerfasserIn] |
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| Links: |
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| Themen: |
2D van der Waals heterostructure photodetector |
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| Anmerkungen: |
Date Completed 13.04.2023 Date Revised 13.04.2023 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
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| doi: |
10.1021/acsami.3c01807 |
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| funding: |
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| Förderinstitution / Projekttitel: |
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| PPN (Katalog-ID): |
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| 520 | |a In recent years, two-dimensional (2D) nonlayered Bi2O2Se-based electronics and optoelectronics have drawn enormous attention owing to their high electron mobility, facile synthetic process, stability to the atmosphere, and moderate narrow band gaps. However, 2D Bi2O2Se-based photodetectors typically present large dark current, relatively slow response speed, and persistent photoconductivity effect, limiting further improvement in fast-response imaging sensors and low-consumption broadband detection. Herein, a Bi2O2Se/2H-MoTe2 van der Waals (vdWs) heterostructure obtained from the chemical vapor deposition (CVD) approach and vertical stacking is reported. The proposed type-II staggered band alignment desirable for suppression of dark current and separation of photoinduced carriers is confirmed by density functional theory (DFT) calculations, accompanied by strong interlayer coupling and efficient built-in potential at the junction. Consequently, a stable visible (405 nm) to near-infrared (1310 nm) response capability, a self-driven prominent responsivity (R) of 1.24 A·W-1, and a high specific detectivity (D*) of 3.73 × 1011 Jones under 405 nm are achieved. In particular, R, D*, fill factor, and photoelectrical conversion efficiency (PCE) can be enhanced to 4.96 A·W-1, 3.84 × 1012 Jones, 0.52, and 7.21% at Vg = -60 V through a large band offset originated from the n+-p junction. It is suggested that the present vdWs heterostructure is a promising candidate for logical integrated circuits, image sensors, and low-power consumption detection | ||
| 650 | 4 | |a Journal Article | |
| 650 | 4 | |a 2D van der Waals heterostructure photodetector | |
| 650 | 4 | |a 2H-MoTe2 | |
| 650 | 4 | |a Bi2O2Se | |
| 650 | 4 | |a gate-modulation photovoltaic effect | |
| 650 | 4 | |a type-II band alignment | |
| 700 | 1 | |a Yang, Baoxiang |e verfasserin |4 aut | |
| 700 | 1 | |a Song, Qiqi |e verfasserin |4 aut | |
| 700 | 1 | |a Chen, Jianru |e verfasserin |4 aut | |
| 700 | 1 | |a Li, Hengyi |e verfasserin |4 aut | |
| 700 | 1 | |a Gao, Wei |e verfasserin |4 aut | |
| 700 | 1 | |a Huang, Le |e verfasserin |4 aut | |
| 700 | 1 | |a Zhang, Menglong |e verfasserin |4 aut | |
| 700 | 1 | |a Yang, Mengmeng |e verfasserin |4 aut | |
| 700 | 1 | |a Zheng, Zhaoqiang |e verfasserin |4 aut | |
| 700 | 1 | |a Huo, Nengjie |e verfasserin |4 aut | |
| 700 | 1 | |a Han, Lixiang |e verfasserin |4 aut | |
| 700 | 1 | |a Li, Jingbo |e verfasserin |4 aut | |
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