AAg3Ga8Se14 (A = Rb, Cs) : second-harmonic generation responses realized through the parallel arrangement of AgSe4 and GaSe4 tetrahedrons
Two new quaternary selenides AAg3Ga8Se14, (A = Rb, 1; Cs, 2) were synthesised via solid-state reaction in sealed silica tubes. Compounds 1 and 2 crystallised in the monoclinic space group Cm (no. 8) and their three-dimensional [Ag3Ga8Se14]- anionic frameworks were comprised of AgSe4 and GaSe4 tetrahedrons. Their UV-Vis-near infrared diffuse reflectance spectra showed that 1 and 2 possessed wide band gaps of 2.17 and 2.10 eV, respectively. Notably, under incident laser irradiation at 1910 nm, compounds 1 and 2 presented moderate second-harmonic generation responses of 0.6 and 0.7 × AgGaS2, respectively, with phase-matching behaviours due to the parallel arrangement of nonlinear optical (NLO) functional tetrahedral AgSe4 and GaSe4 units. The laser-induced damage thresholds of 1 and 2 were estimated to be 25.4 and 18.0 MW cm-2, respectively, which were 2.1 and 1.5 times the threshold of AgGaS2. This study revealed that the title selenides, which were constructed from tetrahedral units arranged in a parallel array, are promising infrared NLO materials.
Medienart: |
E-Artikel |
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Erscheinungsjahr: |
2022 |
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Erschienen: |
2022 |
Enthalten in: |
Zur Gesamtaufnahme - volume:51 |
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Enthalten in: |
Dalton transactions (Cambridge, England : 2003) - 51(2022), 29 vom: 26. Juli, Seite 11048-11053 |
Sprache: |
Englisch |
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Beteiligte Personen: |
Qiu, Zhi-Xin [VerfasserIn] |
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Date Revised 26.07.2022 published: Electronic Citation Status PubMed-not-MEDLINE |
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doi: |
10.1039/d2dt01614a |
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funding: |
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Förderinstitution / Projekttitel: |
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PPN (Katalog-ID): |
NLM343167646 |
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520 | |a Two new quaternary selenides AAg3Ga8Se14, (A = Rb, 1; Cs, 2) were synthesised via solid-state reaction in sealed silica tubes. Compounds 1 and 2 crystallised in the monoclinic space group Cm (no. 8) and their three-dimensional [Ag3Ga8Se14]- anionic frameworks were comprised of AgSe4 and GaSe4 tetrahedrons. Their UV-Vis-near infrared diffuse reflectance spectra showed that 1 and 2 possessed wide band gaps of 2.17 and 2.10 eV, respectively. Notably, under incident laser irradiation at 1910 nm, compounds 1 and 2 presented moderate second-harmonic generation responses of 0.6 and 0.7 × AgGaS2, respectively, with phase-matching behaviours due to the parallel arrangement of nonlinear optical (NLO) functional tetrahedral AgSe4 and GaSe4 units. The laser-induced damage thresholds of 1 and 2 were estimated to be 25.4 and 18.0 MW cm-2, respectively, which were 2.1 and 1.5 times the threshold of AgGaS2. This study revealed that the title selenides, which were constructed from tetrahedral units arranged in a parallel array, are promising infrared NLO materials | ||
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700 | 1 | |a Chen, Wen-Fa |e verfasserin |4 aut | |
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700 | 1 | |a Liu, Bin-Wen |e verfasserin |4 aut | |
700 | 1 | |a Guo, Guo-Cong |e verfasserin |4 aut | |
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