Preparation of a CuGaSe2 single crystal and its photocathodic properties
This journal is © The Royal Society of Chemistry..
Chalcopyrite CuGaSe2 single crystals were successfully synthesized by the flux method using a home-made Bridgman-type furnace. The grown crystals were nearly stoichiometric with a Se-poor composition. Although a wafer form of the thus-obtained single crystal showed poor p-type electrical properties due to such unfavorable off-stoichiometry, these properties were found to be improved by applying a post-annealing treatment under Se vapor conditions. As a result, an electrode derived from the Se-treated single crystalline wafer showed appreciable p-type photocurrents. After deposition of a CdS ultrathin layer and a nanoparticulate Pt catalyst on the surface of the electrode, appreciable photoelectrochemical H2 evolution was observed over the modified electrode under photoirradiation by simulated sunlight with application of a bias potential of 0 VRHE.
| Medienart: |
E-Artikel |
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| Erscheinungsjahr: |
2020 |
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| Erschienen: |
2020 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:10 |
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| Enthalten in: |
RSC advances - 10(2020), 66 vom: 02. Nov., Seite 40310-40315 |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Ikeda, Shigeru [VerfasserIn] |
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| Links: |
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| Anmerkungen: |
Date Revised 16.07.2022 published: Electronic-eCollection Citation Status PubMed-not-MEDLINE |
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| doi: |
10.1039/d0ra07904a |
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| funding: |
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| Förderinstitution / Projekttitel: |
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| PPN (Katalog-ID): |
NLM340493887 |
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| 100 | 1 | |a Ikeda, Shigeru |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Preparation of a CuGaSe2 single crystal and its photocathodic properties |
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| 500 | |a published: Electronic-eCollection | ||
| 500 | |a Citation Status PubMed-not-MEDLINE | ||
| 520 | |a This journal is © The Royal Society of Chemistry. | ||
| 520 | |a Chalcopyrite CuGaSe2 single crystals were successfully synthesized by the flux method using a home-made Bridgman-type furnace. The grown crystals were nearly stoichiometric with a Se-poor composition. Although a wafer form of the thus-obtained single crystal showed poor p-type electrical properties due to such unfavorable off-stoichiometry, these properties were found to be improved by applying a post-annealing treatment under Se vapor conditions. As a result, an electrode derived from the Se-treated single crystalline wafer showed appreciable p-type photocurrents. After deposition of a CdS ultrathin layer and a nanoparticulate Pt catalyst on the surface of the electrode, appreciable photoelectrochemical H2 evolution was observed over the modified electrode under photoirradiation by simulated sunlight with application of a bias potential of 0 VRHE | ||
| 650 | 4 | |a Journal Article | |
| 700 | 1 | |a Fujita, Wakaba |e verfasserin |4 aut | |
| 700 | 1 | |a Okamoto, Riku |e verfasserin |4 aut | |
| 700 | 1 | |a Nose, Yoshitaro |e verfasserin |4 aut | |
| 700 | 1 | |a Katsube, Ryoji |e verfasserin |4 aut | |
| 700 | 1 | |a Yoshino, Kenji |e verfasserin |4 aut | |
| 700 | 1 | |a Harada, Takashi |e verfasserin |4 aut | |
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