Waveguide-Integrated van der Waals Heterostructure Mid-Infrared Photodetector with High Performance
Extending the operation wavelength of silicon photonics to the mid-infrared (mid-IR) band will significantly benefit critical application areas, including health care, astronomy, and chemical sensing. However, a major hurdle for mid-IR silicon photonics has been the lack of high-speed, high-responsivity, and low noise-equivalent power (NEP) photodetectors. Here, we demonstrate a van der Waals (vdW) heterostructure mid-IR photodetector integrated on a silicon-on-insulator (SOI) waveguide. The detector is composed of vertically stacked black phosphorus (BP)/molybdenum ditelluride (MoTe2). We measured high responsivity (up to 0.85 A/W) over a 3-4 μm spectral range, indicating that waveguide-confined light could strongly interact with vdW heterostructures on top. In addition, the waveguide-integrated detector could be modulated at high speed (>10 MHz) and its switching performance shows excellent stability. These results, together with the noise analysis, indicate that the NEP of the detector is as low as 8.2 pW/Hz1/2. This reported critical missing piece in the silicon photonic toolbox will enable the wide-spread adoption of mid-IR integrated photonic circuits.
Medienart: |
E-Artikel |
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Erscheinungsjahr: |
2022 |
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Erschienen: |
2022 |
Enthalten in: |
Zur Gesamtaufnahme - volume:14 |
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Enthalten in: |
ACS applied materials & interfaces - 14(2022), 21 vom: 01. Juni, Seite 24856-24863 |
Sprache: |
Englisch |
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Beteiligte Personen: |
Chen, Po-Liang [VerfasserIn] |
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Links: |
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Themen: |
Black phosphorus |
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Anmerkungen: |
Date Revised 01.06.2022 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
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doi: |
10.1021/acsami.2c01094 |
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funding: |
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Förderinstitution / Projekttitel: |
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PPN (Katalog-ID): |
NLM340058692 |
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520 | |a Extending the operation wavelength of silicon photonics to the mid-infrared (mid-IR) band will significantly benefit critical application areas, including health care, astronomy, and chemical sensing. However, a major hurdle for mid-IR silicon photonics has been the lack of high-speed, high-responsivity, and low noise-equivalent power (NEP) photodetectors. Here, we demonstrate a van der Waals (vdW) heterostructure mid-IR photodetector integrated on a silicon-on-insulator (SOI) waveguide. The detector is composed of vertically stacked black phosphorus (BP)/molybdenum ditelluride (MoTe2). We measured high responsivity (up to 0.85 A/W) over a 3-4 μm spectral range, indicating that waveguide-confined light could strongly interact with vdW heterostructures on top. In addition, the waveguide-integrated detector could be modulated at high speed (>10 MHz) and its switching performance shows excellent stability. These results, together with the noise analysis, indicate that the NEP of the detector is as low as 8.2 pW/Hz1/2. This reported critical missing piece in the silicon photonic toolbox will enable the wide-spread adoption of mid-IR integrated photonic circuits | ||
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700 | 1 | |a Chang, Tian-Yun |e verfasserin |4 aut | |
700 | 1 | |a Li, Wei-Qing |e verfasserin |4 aut | |
700 | 1 | |a Li, Jia-Xin |e verfasserin |4 aut | |
700 | 1 | |a Lee, Seokhyeong |e verfasserin |4 aut | |
700 | 1 | |a Fang, Zhuoran |e verfasserin |4 aut | |
700 | 1 | |a Li, Mo |e verfasserin |4 aut | |
700 | 1 | |a Majumdar, Arka |e verfasserin |4 aut | |
700 | 1 | |a Liu, Chang-Hua |e verfasserin |4 aut | |
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