The optoelectronic properties improvement of double perovskites Cs2SnI6 by anionic doping (F-)
© 2022. The Author(s)..
Tin-based perovskite material is the best choice to replace heavy metal element lead during the last several years. Cs2SnI6 with Sn4+ is a fascinating optoelectronic material, which is a more air-stable composite cesium tin halide peroxide variant from CsSnI3. However, the optoelectronic performance between N and P type of Cs2SnI6 varies considerably. Herein, we synthesized uniform Cs2SnI6 by modified two-step method, which thermal evaporated CsI firstly, and followed annealing in the SnI4 and I2 vapor at 150 °C resulted in uniform Cs2SnI6 films. SnF4 is used as a dopant source to improve the optoelectronic properties of Cs2SnI6 films. Results indicate that good crystallinity was obtained for all films and the doped films underwent a crystalline plane meritocracy transition. The doped films had a flat, non-porous morphology with large grains. The high transmittance of the doped films in the infrared region led to the avoidance of self-generated thermal decomposition. With the help of F-, the films became more conductive and had higher carrier mobility. DFT calculations showed that doping with F reduced the surface energy of (004), resulted in a preferred orientation transition in the crystal of Cs2SnI6. Fluorine doped double layer perovskite materials would have a broader application prospect.
| Medienart: |
E-Artikel |
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| Erscheinungsjahr: |
2022 |
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| Erschienen: |
2022 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:12 |
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| Enthalten in: |
Scientific reports - 12(2022), 1 vom: 18. Jan., Seite 935 |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Wu, Junsheng [VerfasserIn] |
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Date Revised 05.04.2024 published: Electronic Citation Status PubMed-not-MEDLINE |
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| doi: |
10.1038/s41598-022-04960-2 |
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| funding: |
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| Förderinstitution / Projekttitel: |
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| 100 | 1 | |a Wu, Junsheng |e verfasserin |4 aut | |
| 245 | 1 | 4 | |a The optoelectronic properties improvement of double perovskites Cs2SnI6 by anionic doping (F-) |
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| 500 | |a Citation Status PubMed-not-MEDLINE | ||
| 520 | |a © 2022. The Author(s). | ||
| 520 | |a Tin-based perovskite material is the best choice to replace heavy metal element lead during the last several years. Cs2SnI6 with Sn4+ is a fascinating optoelectronic material, which is a more air-stable composite cesium tin halide peroxide variant from CsSnI3. However, the optoelectronic performance between N and P type of Cs2SnI6 varies considerably. Herein, we synthesized uniform Cs2SnI6 by modified two-step method, which thermal evaporated CsI firstly, and followed annealing in the SnI4 and I2 vapor at 150 °C resulted in uniform Cs2SnI6 films. SnF4 is used as a dopant source to improve the optoelectronic properties of Cs2SnI6 films. Results indicate that good crystallinity was obtained for all films and the doped films underwent a crystalline plane meritocracy transition. The doped films had a flat, non-porous morphology with large grains. The high transmittance of the doped films in the infrared region led to the avoidance of self-generated thermal decomposition. With the help of F-, the films became more conductive and had higher carrier mobility. DFT calculations showed that doping with F reduced the surface energy of (004), resulted in a preferred orientation transition in the crystal of Cs2SnI6. Fluorine doped double layer perovskite materials would have a broader application prospect | ||
| 650 | 4 | |a Journal Article | |
| 700 | 1 | |a Zhao, Zhuo |e verfasserin |4 aut | |
| 700 | 1 | |a Zhou, Yanwen |e verfasserin |4 aut | |
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