Monolayer MoS2 Synaptic Transistors for High-Temperature Neuromorphic Applications
As essential units in an artificial neural network (ANN), artificial synapses have to adapt to various environments. In particular, the development of synaptic transistors that can work above 125 °C is desirable. However, it is challenging due to the failure of materials or mechanisms at high temperatures. Here, we report a synaptic transistor working at hundreds of degrees Celsius. It employs monolayer MoS2 as the channel and Na+-diffused SiO2 as the ionic gate medium. A large on/off ratio of 106 can be achieved at 350 °C, 5 orders of magnitude higher than that of a normal MoS2 transistor in the same range of gate voltage. The short-term plasticity has a synaptic transistor function as an excellent low-pass dynamic filter. Long-term potentiation/depression and spike-timing-dependent plasticity are demonstrated at 150 °C. An ANN can be simulated, with the recognition accuracy reaching 90%. Our work provides promising strategies for high-temperature neuromorphic applications.
| Medienart: |
E-Artikel |
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| Erscheinungsjahr: |
2021 |
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| Erschienen: |
2021 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:21 |
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| Enthalten in: |
Nano letters - 21(2021), 24 vom: 22. Dez., Seite 10400-10408 |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Wang, Bolun [VerfasserIn] |
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| Links: |
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| Themen: |
7631-86-9 |
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| Anmerkungen: |
Date Completed 09.03.2022 Date Revised 09.03.2022 published: Print-Electronic Citation Status MEDLINE |
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| doi: |
10.1021/acs.nanolett.1c03684 |
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| funding: |
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| Förderinstitution / Projekttitel: |
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| PPN (Katalog-ID): |
NLM334071526 |
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| 520 | |a As essential units in an artificial neural network (ANN), artificial synapses have to adapt to various environments. In particular, the development of synaptic transistors that can work above 125 °C is desirable. However, it is challenging due to the failure of materials or mechanisms at high temperatures. Here, we report a synaptic transistor working at hundreds of degrees Celsius. It employs monolayer MoS2 as the channel and Na+-diffused SiO2 as the ionic gate medium. A large on/off ratio of 106 can be achieved at 350 °C, 5 orders of magnitude higher than that of a normal MoS2 transistor in the same range of gate voltage. The short-term plasticity has a synaptic transistor function as an excellent low-pass dynamic filter. Long-term potentiation/depression and spike-timing-dependent plasticity are demonstrated at 150 °C. An ANN can be simulated, with the recognition accuracy reaching 90%. Our work provides promising strategies for high-temperature neuromorphic applications | ||
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| 700 | 1 | |a Wang, Xuewen |e verfasserin |4 aut | |
| 700 | 1 | |a Wang, Enze |e verfasserin |4 aut | |
| 700 | 1 | |a Li, Chenyu |e verfasserin |4 aut | |
| 700 | 1 | |a Peng, Ruixuan |e verfasserin |4 aut | |
| 700 | 1 | |a Wu, Yonghuang |e verfasserin |4 aut | |
| 700 | 1 | |a Xin, Zeqin |e verfasserin |4 aut | |
| 700 | 1 | |a Sun, Yufei |e verfasserin |4 aut | |
| 700 | 1 | |a Guo, Jing |e verfasserin |4 aut | |
| 700 | 1 | |a Fan, Shoushan |e verfasserin |4 aut | |
| 700 | 1 | |a Wang, Chen |e verfasserin |4 aut | |
| 700 | 1 | |a Tang, Jianshi |e verfasserin |4 aut | |
| 700 | 1 | |a Liu, Kai |e verfasserin |4 aut | |
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