Surface Morphology and Microstructure Evolution of Single Crystal Diamond during Different Homoepitaxial Growth Stages

Homoepitaxial growth of step-flow single crystal diamond was performed by microwave plasma chemical vapor deposition system on high-pressure high-temperature diamond substrate. A coarse surface morphology with isolated particles was firstly deposited on diamond substrate as an interlayer under hillock growth model. Then, the growth model was changed to step-flow growth model for growing step-flow single crystal diamond layer on this hillock interlayer. Furthermore, the surface morphology evolution, cross-section and surface microstructure, and crystal quality of grown diamond were evaluated by scanning electron microscopy, high-resolution transmission electron microcopy, and Raman and photoluminescence spectroscopy. It was found that the surface morphology varied with deposition time under step-flow growth parameters. The cross-section topography exhibited obvious inhomogeneity in crystal structure. Additionally, the diamond growth mechanism from the microscopic point of view was revealed to illustrate the morphological and structural evolution.

Medienart:

E-Artikel

Erscheinungsjahr:

2021

Erschienen:

2021

Enthalten in:

Zur Gesamtaufnahme - volume:14

Enthalten in:

Materials (Basel, Switzerland) - 14(2021), 20 vom: 11. Okt.

Sprache:

Englisch

Beteiligte Personen:

Shao, Guoqing [VerfasserIn]
Wang, Juan [VerfasserIn]
Zhang, Shumiao [VerfasserIn]
Wang, Yanfeng [VerfasserIn]
Wang, Wei [VerfasserIn]
Wang, Hong-Xing [VerfasserIn]

Links:

Volltext

Themen:

Crystal quality
Hillock growth
Journal Article
Microstructure
Step-flow growth
Surface morphology

Anmerkungen:

Date Revised 26.10.2021

published: Electronic

Citation Status PubMed-not-MEDLINE

doi:

10.3390/ma14205964

funding:

Förderinstitution / Projekttitel:

PPN (Katalog-ID):

NLM33223696X