Fabrication of nanogap structures through spatially shaped femtosecond laser modification with the assistance of wet chemical etching
Fabricating nanostructures with an extremely small feature size through a near-infrared femtosecond laser is a considerable challenge. In this Letter, we report a flexible, facile, and mask-free method that enables the formation of nanogap structures with a controllable size on silicon. This method involves spatially shaped femtosecond laser single-pulse modification assisted with chemical etching. Nanogaps obtained after etching can be divided into two categories, namely a ring dimer with a nanogap (type I) and Crack-nanogap (type II). The nanogap between the ring dimer could be reduced to 68 nm with a gradual increase in the laser fluence. For the Crack-nanogap obtained through crack propagation induced by stress release during a wet etching process, the smallest gap size is approximately 9 nm.
| Medienart: |
E-Artikel |
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| Erscheinungsjahr: |
2021 |
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| Erschienen: |
2021 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:46 |
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| Enthalten in: |
Optics letters - 46(2021), 15 vom: 01. Aug., Seite 3560-3563 |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Zhou, Shipeng [VerfasserIn] |
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| Links: |
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| Anmerkungen: |
Date Revised 02.08.2021 published: Print Citation Status PubMed-not-MEDLINE |
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| doi: |
10.1364/OL.431385 |
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| funding: |
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| Förderinstitution / Projekttitel: |
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NLM328738204 |
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| 245 | 1 | 0 | |a Fabrication of nanogap structures through spatially shaped femtosecond laser modification with the assistance of wet chemical etching |
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| 500 | |a Citation Status PubMed-not-MEDLINE | ||
| 520 | |a Fabricating nanostructures with an extremely small feature size through a near-infrared femtosecond laser is a considerable challenge. In this Letter, we report a flexible, facile, and mask-free method that enables the formation of nanogap structures with a controllable size on silicon. This method involves spatially shaped femtosecond laser single-pulse modification assisted with chemical etching. Nanogaps obtained after etching can be divided into two categories, namely a ring dimer with a nanogap (type I) and Crack-nanogap (type II). The nanogap between the ring dimer could be reduced to 68 nm with a gradual increase in the laser fluence. For the Crack-nanogap obtained through crack propagation induced by stress release during a wet etching process, the smallest gap size is approximately 9 nm | ||
| 650 | 4 | |a Journal Article | |
| 700 | 1 | |a Li, Xiaowei |e verfasserin |4 aut | |
| 700 | 1 | |a Huang, Ji |e verfasserin |4 aut | |
| 700 | 1 | |a Wang, Zhipeng |e verfasserin |4 aut | |
| 700 | 1 | |a Liu, Yang |e verfasserin |4 aut | |
| 700 | 1 | |a Gao, Shuai |e verfasserin |4 aut | |
| 700 | 1 | |a Xu, Zhijie |e verfasserin |4 aut | |
| 700 | 1 | |a Jiang, Lan |e verfasserin |4 aut | |
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