Impurity-Induced Emission in Re-Doped WS2 Monolayers
Impurity doping is a viable route toward achieving desired subgap optical response in semiconductors. In strongly excitonic two-dimensional (2D) semiconductors such as transition metal dichalcogenides (TMDs), impurities are expected to result in bound-exciton emission. However, doped TMDs often exhibit a broad Stokes-shifted emission without characteristic features, hampering strategic materials engineering. Here we report observation of a well-defined impurity-induced emission in monolayer WS2 substitutionally doped with rhenium (Re), which is an electron donor. The emission exhibits characteristics of localized states and dominates the spectrum up to 200 K. Gate dependence reveals that neutral impurity centers are responsible for the observed emission. Using GW-Bethe-Salpeter equation (GW-BSE) calculations, we attribute the emission to transitions between spin-split upper Re band and valence band edge.
| Medienart: |
E-Artikel |
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| Erscheinungsjahr: |
2021 |
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| Erschienen: |
2021 |
| Enthalten in: |
Zur Gesamtaufnahme - volume:21 |
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| Enthalten in: |
Nano letters - 21(2021), 12 vom: 23. Juni, Seite 5293-5300 |
| Sprache: |
Englisch |
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| Beteiligte Personen: |
Loh, Leyi [VerfasserIn] |
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| Links: |
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| Themen: |
Bound excitons |
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| Anmerkungen: |
Date Revised 23.06.2021 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
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| doi: |
10.1021/acs.nanolett.1c01439 |
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| funding: |
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| Förderinstitution / Projekttitel: |
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| PPN (Katalog-ID): |
NLM326638873 |
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| 500 | |a Date Revised 23.06.2021 | ||
| 500 | |a published: Print-Electronic | ||
| 500 | |a Citation Status PubMed-not-MEDLINE | ||
| 520 | |a Impurity doping is a viable route toward achieving desired subgap optical response in semiconductors. In strongly excitonic two-dimensional (2D) semiconductors such as transition metal dichalcogenides (TMDs), impurities are expected to result in bound-exciton emission. However, doped TMDs often exhibit a broad Stokes-shifted emission without characteristic features, hampering strategic materials engineering. Here we report observation of a well-defined impurity-induced emission in monolayer WS2 substitutionally doped with rhenium (Re), which is an electron donor. The emission exhibits characteristics of localized states and dominates the spectrum up to 200 K. Gate dependence reveals that neutral impurity centers are responsible for the observed emission. Using GW-Bethe-Salpeter equation (GW-BSE) calculations, we attribute the emission to transitions between spin-split upper Re band and valence band edge | ||
| 650 | 4 | |a Journal Article | |
| 650 | 4 | |a bound excitons | |
| 650 | 4 | |a defect emission | |
| 650 | 4 | |a substitutional doping | |
| 650 | 4 | |a transition metal dichalcogenides | |
| 650 | 4 | |a two-dimensional (2D) semiconductors | |
| 700 | 1 | |a Chen, Yifeng |e verfasserin |4 aut | |
| 700 | 1 | |a Wang, Junyong |e verfasserin |4 aut | |
| 700 | 1 | |a Yin, Xinmao |e verfasserin |4 aut | |
| 700 | 1 | |a Tang, Chi Sin |e verfasserin |4 aut | |
| 700 | 1 | |a Zhang, Qi |e verfasserin |4 aut | |
| 700 | 1 | |a Watanabe, Kenji |e verfasserin |4 aut | |
| 700 | 1 | |a Taniguchi, Takashi |e verfasserin |4 aut | |
| 700 | 1 | |a Wee, Andrew Ts |e verfasserin |4 aut | |
| 700 | 1 | |a Bosman, Michel |e verfasserin |4 aut | |
| 700 | 1 | |a Quek, Su Ying |e verfasserin |4 aut | |
| 700 | 1 | |a Eda, Goki |e verfasserin |4 aut | |
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| 773 | 1 | 8 | |g volume:21 |g year:2021 |g number:12 |g day:23 |g month:06 |g pages:5293-5300 |
| 856 | 4 | 0 | |u http://dx.doi.org/10.1021/acs.nanolett.1c01439 |3 Volltext |
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